V BR
V RWM
V F1
V F2 @ I F2
tfr
trr
TYPES
@ IR
IFM
IF
IR = 10 mA
=100 A
=10 mA
IF = 10 mA
(Pulsed)
(Pulsed)
=50 mA
IREC = 1 mA
V (pk)
V (pk)
V dc
V dc
mA
ns
ns
1N6638U & US
150
125
0.8
1.1
200
20
4.5
1N6642U & US
100
75
0.8
1.2
100
20
5.0
1N6643U & US
75
50
1.0
1.2
100
20
6.0
I R1
I R2
I R3
I R4
C T1
C T2
TYPES
V R
@V R
V R = 20 V
V R = V RWM
V R =
V R =
= 20 V
= V RWM
TA = 150C
TA = 150C
0V
1.5V
nA dc
A dc
A dc
A dc
pF
pF
1N6638U & US
35
0.5
50
100
2.5
2.0
1N6642U & US
25
0.5
50
100
5.0
2.8
1N6643U & US
50
0.5
75
160
5.0
2.8
157
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 300 mA
Derating: 4.6 mA/C Above TEC = + 110C
Surge Current: I
FSM
= 2.5A, half sine wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified.
1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
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