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Электронный компонент: JANTX1N4938-1

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Microsemi
580 Pleasant Street, Watertown, MA. 02472-2408, 617-926-0404, Fax: 617-924-1235
Page 1
Copyright
2001
Rev. 0.02, 2001-05-15
WWW
.
M
i
c
r
o
sem
i
.
COM
1N4938, 1N4938-1, LL4938
Silicon Switching Diode
P
RODUCT
P
REVIEW
W A T E R T O W N D I V I S I O N
D E S C R I P T I O N
D E S C R I P T I O N
D E S C R I P T I O N
D E S C R I P T I O N
These silicon switching diodes are
available in DO-35 glass packages and
LL4938 Mini-Melf (DO-213AA).

These devices are used in general-
purpose applications where high voltage
and switching speed are important.
When ordering Mil-PRF-19500/169
parts, use the number with the
appropriate 1N4938-1 JAN, JTX or
JTXV prefix.
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
1N4938
LL4938
ABSOLUTE MAXIMUM RATINGS AT 25 C
(UNLESS OTHERWISE SPECIFIED)
Rating Symbol
Value
Unit
Peak Inverse Voltage@ 100
A
PIV 200(Min.) Volts
Average Rectified Current
I
A
vg
100 mAmps
Continuous Forward Current
I
F
dc
100 mAmps
Peak Surge Current
(t
peak
= 1
sec.)
I
peak
1.0 Amp
Power Dissipation T
L
=50C,
L = 3/8" from body
P
tot
500 mWatts
Storage Temperature Range
T
S t
-65
to
+200 C
Operating Temperature
T
Op
-65
to
+175 C
K E Y F E A T U R E S
K E Y F E A T U R E S
K E Y F E A T U R E S
K E Y F E A T U R E S
metallurgical bonded.
available up to JANTXV for
1N4938-1 axial devices &
1N4938UR-1 MINI-MELF.



APPLIC
APPLIC
APPLIC
APPLICATIONS/BENEFITS
ATIONS/BENEFITS
ATIONS/BENEFITS
ATIONS/BENEFITS
High Voltage and Switching
Speed.









1
1
N
N
4
4
9
9
3
3
8
8
,
,
1
1
N
N
4
4
9
9
3
3
8
8
-
-
1
1
,
,
L
L
L
L
4
4
9
9
3
3
8
8
Microsemi
580 Pleasant Street, Watertown, MA. 02472-2408, 617-926-0404, Fax: 617-924-1235
Page 2
Copyright
2001
Rev. 0.02, 2001-05-15
WWW
.
M
i
c
r
o
sem
i
.
COM
1N4938, 1N4938-1, LL4938
Silicon Switching Diode
P
RODUCT
P
REVIEW
W A T E R T O W N D I V I S I O N

































ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter Symbol
Conditions
Min
Max
Units

Forward Voltage Drop
V
F
1
F
=100mA
1.0
V
Reverse Leakage Current
@150C
I
R
V
R
= 175 V
100
A
Reverse Leakage Current
I
R
V
R
= 175 V
100
nA
Capacitance C
T
V
R
= 0 V, F = 1 MH
Z
5.0
P
F
Reverse Recovery Time
T
r r
(See note 1)
50
ns


Note 1: Per Method 4031-B with I
F
= I
R
= 30 ma, R
L
= 100 Ohms, C = 3 Pf
































PRODUCT PRELIMINARY DATA Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
Microsemi
580 Pleasant Street, Watertown, MA. 02472-2408, 617-926-0404, Fax: 617-924-1235
Page 3
Copyright
2001
Rev. 0.02, 2001-05-15
WWW
.
M
i
c
r
o
sem
i
.
COM
1N4938, 1N4938-1, LL4938
Silicon Switching Diode
P
RODUCT
P
REVIEW
W A T E R T O W N D I V I S I O N




1N4938 DO-35 Glass Package
(nominal dimensions
)

LL4938 LL-34/35 MINI-MELF
SMD Package (DO-213AA)
(nominal dimensions)
D
D
A
A
T
T
A
A
P
P
A
A
C
C
K
K
A
A
G
G
E
E
Microsemi
580 Pleasant Street, Watertown, MA. 02472-2408, 617-926-0404, Fax: 617-924-1235
Page 4
Copyright
2001
Rev. 0.02, 2001-05-15
WWW
.
M
i
c
r
o
sem
i
.
COM
1N4938, 1N4938-1, LL4938
Silicon Switching Diode
P
RODUCT
P
REVIEW
W A T E R T O W N D I V I S I O N
NOTES:
N
N
O
O
T
T
E
E
S
S