V F @ I F
TYPES
VdC
mA
MIN
MAX
(PULSED)
1N6639US
1.20
500
0.54
0.62
1
1N6640US
0.76
0.86
50
0.82
0.92
100
0.87
1.00
200
1N6641US
1.10
200
159
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
V BRR
V RWM
I R1
I R2
T FR
T RR
CT
TYPES
@ 10 A
@ TA = +25
C
@ TA = +150
C
IF
I R = 10 mA
VR = 0
VR =
VR =
= 200 mA
I F = 10 mA
V RWM
V RWM
RL = 100
V(pk)
V(pk)
nA dc
A dc
ns
ns
pF
1N6639US
100
75
100
100
10
4.0
2.5
1N6640US
75
50
100
100
10
4.0
2.5
1N6641US
75
50
100
100
10
5.0
3.0
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 300 mA
Derating: 4.6 mA/C Above TEC = + 110C
Surge Current: I
FSM
= 2.5A, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specied.
FORWARD VOLTAGE:
1N6639US THRU 1N6641US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/609
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6639US
1N6640US
1N6641US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/609
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
C/W maximum
POLARITY: Cathode end is banded
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
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