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Электронный компонент: JANTXV1N5711-1

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6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
63
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified.
CDI
MINIMUM
MAXIMUM
MAXIMUM
MAXIMUM REVERSE
MAXIMUM
ESDS
TYPE
BREAKDOWN
FORWARD
FORWARD LEAKAGE CURRENT
CAPACITANCE @ CLASS
NUMBER
VOLTAGE
VOLTAGE VOLTAGE
V
R
= 0 VOLTS
f = 1.0 MH
Z
V
BR
@ 10
A
V
F
@ 1 mA
V
F
@ I
F
I
R
@ V
R
C
T
VOLTS
VOLTS
MILLIAMPS
nA
VOLTS
PICO FARADS
DSB2810
20
0.41
1.0@35
100
15
2.0
1
1N5711,-1
70
0.41
1.0@15
200
50
2.0
1
DSB5712
20
0.41
1.0@35
150
16
2.0
1
1N5712-1
20
0.41
1.0@35
150
16
2.0
1
1N6857-1
20
0.35
0.75@35
150
16
4.5
2
1N6858-1
70
0.36
0.65@15
200
50
4.5
2
NOTE:
Effective Minority Carrier Lifetime (

) is 100 Pico Seconds
1N5711-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/444
1N5712-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
SCHOTTKY BARRIER DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 250
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 40
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MAXIMUM RATINGS
Operating Temperature: -65C to +150C
Storage Temperature: -65C to +150C
Operating Current: 5711 types
:33mA dc@ TL = +130C, L = 3/8"
2810,5712 & 6858 types
:75mA dc@ TL = +110C, L = 3/8"
6857 TYPE
:75mA dc@ TL = +70C, L = 3/8"
Derating:
all types:
Derate to 0 (zero)mA@+150C
1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as "drop-in" replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
64
1N5711, 1N5712, 1N6857, 1N6858
DSB5712
and
DSB2810
INCLUDING -1 VERSIONS
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
0
.2
.4
.6
.8
1.0
1.2
VF FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
0
5.0
10
15
20
25
30
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
DSB5712 and DSB2810
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
0
10
20
30
40
50
60
VR REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
1N5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at
Various Temperatures.
.1
1.0
10
100
IF FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
I F
FORWARD CURRENT (mA)
I F
FORWARD CURRENT (mA)
I R
REVERSE CURRENT (nA)
I R
REVERSE CURRENT (nA)
R
D
DYNAMIC RESISTANCE (!!)
100
10
1.0
.1
.01
100,000
10,000
1000
1
10
1
50
10
5
1
.5
.1
.05
.01
1000
100
10
1
10,000
1000
100
10
1.0