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Электронный компонент: KV1931A

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UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION
VARACTOR DIODES
DESCRIPTION
The KV 1900 series of super hyperabrupt varactor di-
odes combines low voltage with high ratio tuning. They
feature grown junction mesa technology for the highest
Q commercially available. Passivation is our dense mil
spec silicon dioxide for the lowest 1/F noise and low
leakage even at temperature extremes. They are avail-
able in a wide range of package styles including chip
(style 00) and most other conventional ceramic micro-
wave packages. When ordering, specify the desired
case style by adding its number as a suffix to the basic
model number. For more details on surface mount Super
Hyperabrupt Varactors see the Surface Mount Devices
section.
APPLICATIONS
Low voltage / battery powered equipment from UHF
through Ku band including:
Wide bandwidth VCO's
Voltage Tunable Filters
Phase Shifters
Modulators
VCXO's
RATINGS:
Minimum Voltage Breakdown: 12 V @ 10
A
Maximum Leakage Current:
50 nA @ 10 V / 25
C
Junction Operating Temp.:
-55
C to +125
C
Storage Temp.:
-65
C to +200
C
ELECTRICAL SPECIFICATIONS: T
A
=25C
MODEL
C
J
@ 1 V (pF)
C
J
@ 2.5 V (pF)
C
J
@ 4 V (pF)
C
J
@ 8 V (pF)
Q @ 4 V /
50 MHz
KV1911A
>36.00
18 - 27
<11.80
<6.00
400
KV1951A
>26.00
13 - 20
< 8.80
<4.50
500
KV1921A
>17.00
8.3 - 12.8
< 5.80
<3.00
600
KV1931A
>13.00
6.3 - 9.8
< 4.30
<2.50
750
KV1941A
> 9.00
4.3 - 6.3
< 2.80
<1.50
900
KV1961A
> 3.80
1.8 - 2.8
< 1.30
<0.80
1200
KV1971A
> 1.65
0.9 - 1.35
< 0.60
<0.35
1400
KV1981A
> 1.20
0.6 - 0.9
< 0.45
<0.30
1600
KV1991A
> 0.60
0.3 - 0.6
< 0.25
<0.15
1800
SEMICONDUCTOR OPERATION
75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748
39
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