2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
MSC1044.PDF
Updated: November 1998
TD3160
Electrical Characteristics @ 25
o
C
Features
Ultra Thin Construction
Low leakage reverse current
Low forward voltage drop
Die metallization is solderable or weldable
Passivated metallization will not degrade in humidity
Space Level Quality
Applications
Bypass diode designed for Solar Cell protection
Extreme Temperature Cycling enviornments
Exposed Solar Array surface mount
Solar Array Bypass Diode
20 Volts
2.0 Amps
Mechanical Outline
QCI Testing
Bond Pull
Temperature Shock
High Temperature Reverse Bias
Burn-In
Humidity
Chip Dimensions
0.25" x 0.25" x 0.003"
SYMBOL CHARACTERISTIC CONDITIONS MAX UNITS
IR Reverse (Leakage) Current
VR = 5 Vdc 5 uAmps
VF Forward Voltage IF = 2.0 A pulse test pw=300ms, d/c<2% 740 mVolts
BVR Breakdown Voltage IR = 100 uA (min) 50 Volts
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