Mimix Broadband
's four stage 36.0-43.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 24.0
dB with a noise figure of 4.0 dB across the band. Gain
increases with frequency to compensate for other
component roll-off factors common in 38.0-40.0 GHz
systems. This MMIC uses Mimix Broadband
's 0.15 m
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Page 1 of 6
Features
High Dynamic Range/Postivie Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
24.0 dB Small Signal Gain
4.0 dB Noise Figure at Low Noise Bias
+14 dBm P1dB Compression Point at Low Noise Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
36.0
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
8.0
8.0
24.0
+/-2.5
45.0
4.0
+14.0
+24.0
+3.0
-0.5
110
Max.
43.0
-
-
-
-
-
-
-
-
+5.5
0.0
220
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250 mA
+0.3 VDC
-8.0, -3.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.
(2) Measured using constant current.
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
1,2
1,2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
April 2005 - Rev 01-Apr-05
B1002
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Buffer Amplifier Measurements
XB1002 Vd1,2=3.0 V Id1,2=110 mA
0
5
10
15
20
25
30
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
Frequency (GHz)
Gain (dB)
-60
-50
-40
-30
-20
-10
0
Reverse Isolation (dB)
S21 Avg
S12 Avg
XB1002 Vd1,2=3.0 V Id1,2=110 mA
-20
-15
-10
-5
0
5
10
15
20
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
Frequency (GHz)
Input Return Loss (dB)
-20
-15
-10
-5
0
5
10
15
20
Output Return Loss (dB)
S11 Avg
S22 Avg
XB1002 Vd1,2=3.0 V Id1,2=110 mA
0
1
2
3
4
5
35.0
36.0
37.0
38.0
39.0
40.0
Frequency (GHz)
Noise Figure (dB)
XB1002 Vd1,2=3.0 V Id1,2=110 mA
8
9
10
11
12
13
14
15
16
17
18
35.0
37.0
39.0
41.0
43.0
45.0
Frequency (GHz)
Output Power at P1dB (dBm)
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
B1002
April 2005 - Rev 01-Apr-05
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Page 3 of 6
Mechanical Drawing
Bias Arrangement
(Note: Engineering designator is 38BSA_01B1)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.691 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
Bond Pad #6 (Vg1)
Bypass Capacitors
- See App Note [2]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2005 - Rev 01-Apr-05
B1002
RF
In
RF
Out
XB1002
2
3
4
5
6
1
1.150
(0.045)
1.750
(0.069)
0.750
(0.030)
0.0
0.0
1.150
(0.045)
1.750
(0.069)
2.900
(0.114)
0.750
(0.030)
1.500
(0.059)
2
3
4
5
6
1
Vd1,2
RF In
RF Out
Vg1,2
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Page 4 of 6
App Note [1] Biasing
- As shown in the bonding diagram, this device can be operated with all four stages in parallel, and can be biased for
low noise performance or high power performance. Low noise bias is nominally Vd=3V, Id=110mA. More controlled performance will be
obtained by separately biasing Vd1 and Vd2 each at 3.0V, 55mA. Power bias may be as high as Vd=5.5V, Id=220mA with all stages in parallel,
or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 110mA. It is also recommended to use
active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying
the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance
(~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MTTF Tables
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
78 deg Celsius
98 deg Celsius
118 deg Celsius
FITs
1.20E-03
2.00E-02
2.51E-01
MTTF Hours
8.34E+11
4.99E+10
3.99E+09
Rth
-
68.1
C/W
-
Bias Conditions: Vd1=Vd2=3.0V, Id1=55 mA, Id2=55 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
137 deg Celsius
157 deg Celsius
177 deg Celsius
FITs
1.58E+00
1.30E+01
8.84E+01
MTTF Hours
6.32E+08
7.70E+07
1.13E+07
Rth
-
66.3
C/W
-
Bias Conditions: Vd1=Vd2=5.5V, Id1=110 mA, Id2=110 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
B1002
April 2005 - Rev 01-Apr-05
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
R=30.0
R=30.0
R=20.0
R=5.0
R=5.0
R=5.0
R=5.0
RFin
Vg1
Vd1
R=5.0
RFout
Vd2
R=20.0
R=30.0
R=30.0
R=20.0
Vg2
R=20.0
R=5.0
R=5.0
Device Schematic
Typical Application
Mimix Broadband MMIC-based 36.0-40.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)
IF IN
2 GHz
XB1002
XP1001
XU1001
WG
Sideband
Reject
RF Out
37.0-39.5 GHz
On-Chip
Temp Comp
Detector
LO(+15dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
B1002
April 2005 - Rev 01-Apr-05
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Handling and Assembly Information
CAUTION!
- Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy
- Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD
- Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment
- GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding
- Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
2
+
-
B1002
April 2005 - Rev 01-Apr-05
PDF 
ZIP