11.0-16.0 GHz GaAs MMIC
Power Amplifier
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1008
Mimix Broadband's three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.5 dBm. This
MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
General Description
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.5 VDC
80,175,750 mA
+0.3 VDC
+12 dBm
-65 to +165
O
C
-55 to MTTF TAble
MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
Features
Chip Device Layout
3
Excellent Linear Output Amplifier Stage
31.0 dB Small Signal Gain
+30.0 dBm P1dB Compression Point
+38.5 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=5.0V, Vg=-0.3V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
11.0
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
7.0
17.0
31.0
+/-0.5
-
+30.0
+38.5
+5.0
-0.3
925
Max.
16.0
-
-
-
-
-
-
-
-
0.0
-
(1) Measured at +18 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
1,2
2
Power Amplifier Measurements
Page 2 of 6
11.0-16.0 GHz GaAs MMIC
Power Amplifier
Measured perfor mance characteristics (Typical at 25C)
Vd1= 5 V, Id= 75 mA; Vd 2= 5V, Vd2= 170 mA ; Vd3= 5V, Vd3= 680 mA
*Fixtured data
*Fixtured data
P1dB
Psat
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
9
10
11
12
13
14
15
16
17
Fr e q u e n cy ( GHz )
Po
u
t
(
d
B
m
)
IP3@Pout=18dBm/tone
20
22
24
26
28
30
32
34
9
10
11
12
13
14
15
16
17
Fr e q u e n cy ( GHz )
G
a
in
(
d
B
)
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
10
11
12
13
14
15
16
17
Fre q. (GHz )
O
u
tp
u
t
R
e
tu
r
n
L
o
s
s
(d
B
)
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
Fre q. (GHz )
I
n
p
u
t Re
tu
r
n
L
o
s
s
(d
B
)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1008
S-Parameters
Page 3 of 6
11.0-16.0 GHz GaAs MMIC
Power Amplifier
Measured perfor mance characteristics (Typical at 25C)
Vd1= 5 V, Id= 75 mA; Vd 2= 5V, Vd2= 170 mA ; Vd3= 5V, Vd3= 680 mA
Freq GHz S11 Mag
S11 A ng
S21 Mag
S21 Ang
S12 Mag
S12 A ng
S22 Mag
S22 A ng
10.00
0.33
-36.55
27.88
155.09
0.00
161.32
0.75
114. 74
10.50
0.30
-41.99
27.70
125.86
0.00
147.19
0.70
104.31
11. 00
0.28
-46.19
29.22
96.59
0.00
143.98
0.68
88.88
11. 50
0.26
-49.64
30.39
66.86
0.00
133.38
0.62
69.19
12.00
0.27
-54.12
32.81
36.78
0.00
107.86
0.58
47.84
12.50
0.24
-69.70
35.45
0.80
0.00
120.42
0.54
19.42
13.00
0.21
-75.52
35.19
-34.79
0.00
163.06
0.50
-12.49
13.50
0.16
-84.22
33.92
-70.81
0.00
136.26
0.44
-43.22
14.00
0.13
-85.63
32.01
-104.39
0.00
128.28
0.43
-63.52
14.50
0.07
-74.92
28.83
-137.92
0.00
122.57
0.39
-76.19
15.00
0.09
-51.15
27.79
-167.76
0.00
77.25
0.46
-79.90
15.50
0.10
-68.47
27.76
158.91
0.00
42.07
0.56
-91.08
16.00
0.05
-73.52
27.22
122.32
0.00
10.46
0.65
-106.96
16.50
0.05
-38.33
26.09
84.39
0.00
54.34
0.67
-122.59
17.00
0.04
-23.80
24.52
43.96
0.00
32.49
0.64
-139.15
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1008
Page 4 of 6
11.0-16.0 GHz GaAs MMIC
Power Amplifier
Mechanical Drawing
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.762 mg.
Bias Arrangement
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd1)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vd3)
Bond Pad #6 (Vg3)
Bond Pad #7 (Vd2)
Bond Pad #8 (Vg2)
Bypass Capacitors - See App Note [2]
1
1.280
(0.051)
0.737
(0.029)
0.0
0.0
0.737
(0.029)
1.934
(0.076)
3.480
(0.137)
1.334
(0.053)
0.934
(0.037)
0.534
(0.021)
4
8
7
6
5
0.874
(0.034)
0.474
(0.019)
3
2
RF Out
RF In
Vg2
Vd2
10
Vd3
Vg3
10
1
4
8
7
6
5
3
2
Vg1
10
Vd1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1008
Page 5 of 6
App Note [1] Biasing
-
It is recommended to separately bias each stage at Vd(1,2,3)=5.0V, Id1=75mA, Id2=170mA, and Id3=680mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed
to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Id1=75 mA, Id2=170 mA, Id3=680 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
11.0-16.0 GHz GaAs MMIC
Power Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1008
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