Mimix Broadband
'
s 17.0-27.0 GHz GaAs MMIC receiver has a small signal
conversion gain of 10.0 dB with a noise figure of 3.5 dB and 15.0 dB
image rejection across the band. The device is a three stage LNA
followed by an image reject fundamental mixer using Lange couplers to
improve bandwidth. The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC uses
Mimix Broadband
'
s 0.15
m GaAs PHEMT device model technology, and
is based upon electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
17.0-27.0 GHz GaAs MMIC
Receiver
Absolute Maximum Ratings
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Input Return Loss LO (S22)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Power for 1 dB Compression (P1dB)
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Page 1 of 6
Fundamental Integrated Receiver
10.0 dB Conversion Gain
3.5 dB Noise Figure
15.0 dB Image Rejection
60.0 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Parameter
Units
GHz
GHz
GHz
GHz
dB
dB
dB
dBm
dBc
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
17.0
17.0
15.0
DC
-
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
-
-
-
10.0
8.0
10.0
+15.0
15.0
3.5
60.0
-15.0
-6.0
+3.0
-0.5
90
Max.
27.0
27.0
29.0
2.0
-
-
-
-
-
-
-
-
-
+5.5
0.0
180
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
200 mA
+0.3 VDC
0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Measured using constant current.
2
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2
May 2005 - Rev 13-May-05
R1000
17.0-27.0 GHz GaAs MMIC
Receiver
Page 2 of 6
Mechanical Drawing
(Note: Engineering designator is 25KRP_01E1)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.777 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (IF1)
Bond Pad #3 (LO)
Bond Pad #4 (IF2)
Bond Pad #5 (Vd)
Bond Pad #6 (Vg)
Bias Arrangement
Bypass Capacitors
- See App Note [2]
R1000
IF1
LO
IF2
Vd
Vg
RF
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
0.874
(0.034)
1
2
3
4
5
6
0.0
0.0
3.500
(0.138)
3.183
(0.125)
1.331
(0.052)
3.183
(0.125)
2.660
(0.105)
1.630
(0.064)
1.030
(0.041)
IF1
LO
IF2
Vd
Vg
RF In
1
2
3
4
5
6
17.0-27.0 GHz GaAs MMIC
Receiver
Page 3 of 6
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with all three stages in
parallel, and can be biased for low noise performance or high power performance. Low noise bias is
nominally Vd=3V, Id=90mA and is the recommended bias condition. Power bias may be as high as
Vd=5.5V, Id=180mA. It is also recommended to use active biasing to keep the currents constant as the RF
power and temperature vary; this gives the most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.
The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical
gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied
voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF)
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
78 deg Celsius
98 deg Celsius
118 deg Celsius
FITs
1.01E-03
1.73E-02
2.23E-01
MTTF Hours
9.93E+11
5.79E+10
4.49E+09
Rth
-
85.3
C/W
-
Bias Conditions:
Vd=3.0V, Id=90 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
137 deg Celsius
157 deg Celsius
177 deg Celsius
FITs
1.25E+00
1.02E+01
6.93E+01
MTTF Hours
7.98E+08
9.77E+07
1.44E+07
Rth
-
82.9
C/W
-
Bias Conditions:
Vd=5.5V, Id=180 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
R1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
17.0-27.0 GHz GaAs MMIC
Receiver
Page 4 of 6
R1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
App Note [3] USB/LSB Selection
-
USB
LSB
IF1
IF2
An alternate method of Selection of USB or LSB:
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0) and coupled port (90)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
With IF1 and IF2 connected to the
direct port (0) and coupled port (90)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Upper Side Band operation (USB):
-90
o
In Phase Combiner
USB
In Phase Combiner
LSB
-90
o
IF2
IF1
IF2
IF1
17.0-27.0 GHz GaAs MMIC
Receiver
Page 5 of 6
Typical Application
Mimix Broadband MMIC-based 17.0-27.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 27 GHz)
RF IN
17.7-19.7 GHz
IR Mixer
LNA
Coupler
XR1000
BPF
IF Out
2 GHz
AGC Control
LO(+15dBm)
15.7-17.7 GHz (USB Operation)
19.7-21.7 GHz (LSB Operation)
Also See:
Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used
to drive the XR1000.
R1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
17.0-27.0 GHz GaAs MMIC
Receiver
Page 5 of 5
Handling and Assembly Information
CAUTION!
- Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy
- Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD
- Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment
- GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding
- Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
2
+
-
R1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
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