Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
Mimix Broadband
's 18.0-25.0 GHz GaAs MMIC receiver has a noise
figure of 2.5 dB and 15.0 dB image rejection across the band. This
device is a two stage balanced LNA followed by an image reject sub-
harmonic anti-parallel diode mixer and includes an integrated LO
buffer amplifer. The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. The use of a sub-harmonic mixer makes the provision of
the LO easier than for fundamental mixers at these frequencies. I and Q
mixer outputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband
's 0.15 m GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
18.0-25.0 GHz GaAs MMIC
Receiver
Page 1 of 7
Sub-harmonic Receiver
Integrated LNA, LO Buffer, Image Reject Mixer
+2.0 dBm LO Drive Level
2.5 dB Noise Figure
15.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+4.5 VDC
180, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
3
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
18.0
18.0
7.5
DC
-
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
-
12.0
8.0
+2.0
15.0
2.5
50.0/60.0
-7.0
+3.5
+4.0
-0.3
130
116
Max.
25.0
21.0
11.5
3.0
-
-
-
-
-
-
-
+4.5
+4.5
+0.1
155
140
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
1,2
2
2
2
R1006
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 2 of 7
Receiver Measurements
May 2005 - Rev 13-May-05
18.0-25.0 GHz GaAs MMIC
Receiver
R1006
XR1006 Vd1=3.5 V, Vd2=4.0 V, Id1=130 mA, Id2=116 mA, USB
LO=+2.0 dBm, IF=2.0 GHz , RF=-15.0 dBm, ~1030 Devices
2
3
4
5
6
7
8
9
10
11
12
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
RF Fre que ncy (GHz)
C
o
n
v
e
r
s
i
o
n
G
a
in
(
d
B
)
Max
Median
Mean
-3sigma
XR1006 Vd1=3.5 V, Vd2=4.0 V, Id1=130 mA, Id2=116 mA, USB
LO=+2.0 dBm, IF=2.0 GHz , RF=-15.0 dBm, ~1030 Devices
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
RF Fre que ncy (GHz)
Ima
g
e
R
e
je
c
t
io
n
(
d
B
c
)
Max
Median
Mean
-3sigma
XR1006 Vd1=3.5 V, Vd2=4.0 V, Id1=130 mA, Id2=116 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz , RF=-15.0 dBm, ~1030 Devices
2
3
4
5
6
7
8
9
10
11
12
17.0
18.0
19.0
20.0
21.0
RF Fre que ncy (GHz)
Co
n
v
e
r
s
i
o
n
G
a
i
n
(d
B)
Max
Median
Mean
-3sigma
XR1006 Vd1=3.5 V, Vd2=4.0 V, Id1=130 mA, Id2=116 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz , RF=-15.0 dBm, ~1030 Devices
-30
-25
-20
-15
-10
-5
0
17.0
18.0
19.0
20.0
21.0
RF Fre que ncy (GHz)
Ima
g
e
R
e
je
c
t
io
n
(
d
B
c
)
Max
Median
Mean
-3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 3 of 7
May 2005 - Rev 13-May-05
18.0-25.0 GHz GaAs MMIC
Receiver
R1006
Mechanical Drawing
Bias Arrangement
Bypass Capacitors
- See App Note [2]
(Note: Engineering designator is 22REC0281)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (IF1)
Bond Pad #4 (Vd2)
Bond Pad #5 (LO)
Bond Pad #6 (Vg2b)
Bond Pad #7 (Vg2)
Bond Pad #8 (Vg2a)
Bond Pad #9 (IF2)
Bond Pad #10 (Vg1)
RF
Vd1
IF1
LO
Vd2
IF2
Vg2
Vg1
1
2
3
4
5
6
7
8
1.608
(0.063)
1.945
(0.077)
1.678
(0.066)
2.478
(0.098)
3.278
(0.129)
3.970
(0.156)
1.487
(0.059)
3.677
(0.145)
3.278
(0.129)
3.077
(0.121)
9
10
2.478
(0.098)
1.678
(0.066)
0.0
0.0
1
2
3
4
5
6
7
8
9
10
Vg1
Vg2
IF2
LO
Vd2
IF1
Vd1
RF
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 7
May 2005 - Rev 13-May-05
18.0-25.0 GHz GaAs MMIC
Receiver
R1006
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with
Vd1=3.5V, Id1=130mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF
power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation
constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain
supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical
gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device
as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions: Vd1=3.5V, Vd2=4.0V, Id1=130 mA, Id2=116 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Typical Application
Mimix Broadband MMIC-based 18.0-25.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)
RF IN
17.7-19.7 GHz
IR Mixer
LNA
Coupler
XR1006
BPF
IF Out
2 GHz
LO(+2.0dBm)
7.85-8.85 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
AGC Control
Mimix Broadband's 18.0-25.0 GHz XR1006 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes
up to 16 QAM. The receiver can be used in upper and lower sideband applications from 18.0-25.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 5 of 7
May 2005 - Rev 13-May-05
18.0-25.0 GHz GaAs MMIC
Receiver
R1006
App Note [3] USB/LSB Selection
-
USB
LSB
IF1
IF2
An alternate method of Selection of USB or LSB:
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0) and coupled port (90)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
With IF1 and IF2 connected to the
direct port (0) and coupled port (90)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Upper Side Band operation (USB):
-90
o
In Phase Combiner
USB
In Phase Combiner
LSB
-90
o
IF2
IF1
IF2
IF1
PDF 
ZIP