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Электронный компонент: GVA-84+

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INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
Product Features
DC to 6 GHz
Fixed 5V operation
High Gain, 24 dB typ. at 100 MHz
High IP3, 37 dBm typ.
High Pout, P1dB 20.5dBm typ
Unconditionally stable
Transient protected
Excellent ESD Protection
Protected by US patent 6,943,629
Rev. A
M105887
GVA-84+
ED-11756/5E
060726
Page 1 of 11
simplifi ed schematic and pin description
Function
Pin Number
Description
RF IN
1
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF-OUT and DC-IN
3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in "Recommended
Application Circuit".
GROUND
2,4
Connections to ground. Use via holes as shown in "Suggested Layout for PCB
Design" to reduce ground path inductance for best performance.
General Description
GVA-84+ (RoHS compliant) is a wideband amplifi er offering high dynamic range. Lead fi nish is SnAgNi.
It has repeatable performance from lot to lot and is enclosed in a SOT-89 package. It uses patented
Transient Protected Darlington confi guration and is fabricated using InGaP HBT technology. Expected
MTBF is 1200 years at 85C case temperature. GVA-84+ is designed to be rugged for ESD and supply
switch-on transients.
Monolithic Amplifi er
DC-6 GHz
GVA-84+
GROUND
RF IN
RF-OUT and DC-IN
Typical Applications
Base station infrastructure
Portable Wireless
CATV & DBS
MMDS & Wireless LAN
3 RF-OUT
3 RF-OUT
& DC-IN
& DC-IN
2 GROUND
2 GROUND
1 RF-IN
1 RF-IN
4
Surface Mount
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +Suffi x has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifi cations.
GVA-84+
Monolithic InGaP HBT MMIC Amplifi er
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
Electrical Specifi cations at 25C and 5V, unless noted
Parameter
Min.
Typ.
Max.
Units
Cpk
Frequency Range
DC
6
GHz
Gain
f=0.1GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
22.9
17.4
13.8
24.1
21.7
18.4
16.0
14.6
12.5
25.3
19.9
16.3
dB
>1.5
Magnitude of Gain Variation versus Temperature
(values are negative)
f=0.1GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
.0004
.0021
.0032
.0044
.0058
.0131
.006
dB/C
Input Return Loss
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
15
22.9
20.6
18.5
18.1
19.1
17.9
dB
Output Return Loss
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
6
23.3
10.7
7.7
7.1
7.0
6.3
dB
Reverse Isolation
f=2 GHz
26.5
dB
Output Power @1 dB compression
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
19.4
19.5
19.6
20.4
20.5
20.6
21.0
19.9
17.0
dBm
>1.5
Saturated Output Power
(at 3dB compression)
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
21.7
22.3
22.3
22.2
21.0
18.9
dBm
Output IP3
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
33
32.2
32.9
36.7
35.8
36.6
35.8
34.9
33.0
dBm
>1.5
Noise Figure
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=6 GHz
5.5
5.6
5.5
5.5
5.6
6.2
6.5
6.5
6.6
dB
>1.5
Page 2 of 11
GVA-84+
Monolithic InGaP HBT MMIC Amplifi er
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
Absolute Maximum Ratings
Parameter
Ratings
Operating Temperature*
-45C to 85C
Storage Temperature
-65C to 150C
Operating Current
160 mA
Power Dissipation
1W
Input Power
13 dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1
Case is defi ned as ground leads.
*Based on typical case temperature rise 10C above ambient.
Parameter
Min.
Typ.
Max.
Units
Cpk
Group Delay
f=2 GHz
94
psec
Recommended Device Operating Voltage
4.8
5.0
5.2
V
Device Operating Current
85
108
130
mA
Device Current Variation vs. Temperature at 5V
61.8
A/C
Device Current Variation vs. Voltage at 25C
0.058
mA/mV
Thermal Resistance, junction-to-case
1
64
C/W
Electrical Specifi cations at 25C and 5V, unless noted
Page 3 of 11
GVA-84+
Monolithic InGaP HBT MMIC Amplifi er
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
Typical Performance Curves
S11 vs. TEMPERATURE
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S11 (
d
B)
-45C
+25C
+85C
INPUT POWER=-25dBm, VOLTAGE=5V
S21 vs. TEMPERATURE
-4
0
4
8
12
16
20
24
28
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S21 (
d
B)
-45C
+25C
+85C
INPUT POWER=-25dBm, VOLTAGE=5V
S12 vs. TEMPERATURE
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S12 (
d
B)
-45C
+25C
+85C
INPUT POWER=-25dBm, VOLTAGE=5V
S22 vs. TEMPERATURE
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S22 (
d
B)
-45C
+25C
+85C
INPUT POWER=-25dBm, VOLTAGE=5V
OUTPUT IP3 vs. TEMPERATURE
10
14
18
22
26
30
34
38
42
46
50
0
1000
2000
3000
4000
5000
6000
7000
8000
Frequency (MHz)
IP3 (dBm)
-45C
+25C
+85C
INPUT POWER=-20dBm, VOLTAGE=5V
NOISE FIGURE vs. TEMPERATURE
2
4
6
8
10
12
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
Frequency (MHz)
NOISE FIGURE (dB)
-45C
+25C
+85C
VOLTAGE=5V
Page 4 of 11
GVA-84+
Monolithic InGaP HBT MMIC Amplifi er
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers
NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
Mini-Circuits ISO 9001 & ISO 14001 Certified
12
14
16
18
20
22
24
0
1000
2000
3000
4000
5000
6000
7000
8000
Frequency (MHz)
OU
TPUT POWER (d
Bm)
-45C
+25C
+85C
VOLTAGE=5V
POWER OUTPUT at 1dB COMPRESSION vs. TEMPERATURE
12
14
16
18
20
22
24
0
1000
2000
3000
4000
5000
6000
7000
8000
Frequency (MHz)
OU
T
P
U
T
P
O
WE
R
(d
B
m)
4.75V
5V
5.25V
Temperature=+25C
POWER OUTPUT at 1dB COMPRESSION vs. VOLTAGE
S11 vs. VOLTAGE
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S11 (
d
B)
4.75V
5V
5.25V
INPUT POWER=-25dBm, Temperature=+25C
S21 vs. VOLTAGE
-4
0
4
8
12
16
20
24
28
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S
2
1
(d
B
)
4.75V
5V
5.25V
INPUT POWER=-25dBm @Temperature=+25C
S22 vs. VOLTAGE
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S22 (
d
B)
4.75V
5V
5.25V
INPUT POWER=-25dBm @Temperature=+25C
S12 vs. VOLTAGE
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Frequency (MHz)
S12 (
d
B)
4.75V
5V
5.25V
INPUT POWER=-25dBm, Temperature=+25C
Page 5 of 11