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Электронный компонент: MAV-11BSM

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INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Centers NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 EUROPE 44-1252-832600 Fax 44-1252-837010
Mini-Circuits
ISO 9001 CERTIFIED
MAV-11BSM
REV. OR
M87880
ED-11227
MAV-11BSM
YB/TD/CP
030702
Features
equivalent to Agilent MSA-1105 and
Mini-Circuit's MAV-11SM
high IP3, 34 dBm
excellent VSWR, 1.2:1 typ.
medium gain
output power, 18 dBm
50
,
50 to 1000 MHz
Electrical Specifications @25C
FREQ.
(MHz)
Pin Configuration
RF IN
1
RF OUT
3
DC
3
GND EXT.
2,4
CASE STYLE: RRR137
f
L
- f
U
DC POWER
@ Pin 3
VSWR
(:1)
Typ.
DYNAMIC
RANGE
NF
dB
Typ.
IP3
dBm
Typ.
MAXIMUM
POWER, dBm
Input
(no
dmg.)
Output
(1 dB
Comp.)
Typ.
1000
100
GAIN, dB
Typical @MHz
2000
ABSOLUTE
MAXIMUM
RATING**
Out
In
Current
(mA)
Device
Volt
Typ. Min. Max.
I
(mA)
P
(mW)
Min.*
Applications
cellular
VHF/UHF receivers/transmitters
*
Minimum gain at highest frequency. Full temperature range.
** Permanent damage may occur if any of these limits are exceeded
*** Thermal resistance
jc is from hottest junction in the device to the mounting surface of the leads.
MODEL
NO.
PRICE
$
Qty.
(30)
T
T
T
T
THERMAL
RESIS-
TANCE***
jc,
typ.
C/W
Monolithic Amplifier
Surface Mount
model identification
Model
marking
MAV-11BSM
11
Outline Drawing
Maximum Ratings
Operating Temperature
-40C to 85C
Storage Temperature
-55C to 100C
Outline Dimensions ( )
inch
mm
MAV-11BSM
50-1000
12.7 12.1 11.3 9.5
0.7
9.5
+18.0
+13
4.4
34
1.2
1.2
80
460
60
5.5
4.9
6.0
141
1.50
NEW!
Flatness
typical biasing configuration (MAV)
Resistor Values
Vcc
"1%"
7
28.0
8
45.3
9
61.9
10
78.7
11
95.3
12
113
13
127
14
143
15
158
500
A
B
C
D
E
F
G
H
J
wt.
.28
.14
.030
.020
.145
.110
.006
.010
.030
grams
7.11
3.56
0.76
0.51
3.68
2.79
0.15
0.25
0.76
.015