2SK2975
MITSUBISHI RF POWER MOS FET
Nov. 97
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
High power gain:Gpe
8.4dB
@V
DD
=9.6V,f=450MHz,Pin=30dBm
High efficiency:55% typ.
Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
Typ
Max
Min
Limits
Parameter
Test conditions
Symbol
Parameter
Ratings
175
V
DSS
V
GSS
P
ch
T
j
T
stg
Unit
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
30
20
10
-40 to +110
V
V
W
C
ABSOLUTE MAXIMUM RATINGS
(T
C
=25C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(T
C
=25C, unless otherwise noted)
Symbol
Unit
I
DSS
I
GSS
V
TH
C
iss
C
oss
h
D
P
out
Threshold voltage
Note: Above parameters,ratings,limits and conditions are subject to change.
V
DS
=17V, V
GS
=0V
55
10
1
1.7
A
A
V
%
1.0
Note1: Above parameters are guaranteed independently.
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
V
DS
=9.6V, P
in
=1W,f=450MHz
7
50
8
80
45
pF
pF
W
Conditions
Tc=25C (Note2)
C
2: Solder source pad on Copper Block(14
2.8
2mm)
OUTLINE DRAWING
Dimensions in mm
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
2
3
3.50
1
t=1.2MAX
(BOTTOM)
(TOP)
4.9
INDEX MARK
2.0
LOT No.
TYPE No.
INDEX
MARK
2SK2975
MITSUBISHI RF POWER MOS FET
Nov. 97
1.5mm
46mm
C2
GR40-10
10pF
R1
CR10-562
5600
R2
CR10-562
5600
C7
GR40-102
1000pF
C4
GR40-10
10pF
C12
GR40-130
13pF
C13
GR40-102
1000pF
L1
4Turns AWG#26,
1.1
Enameled wire(mm)
C14
GR40-10
10pF
C1
GR40-102
1000pF
V
GG
INPUT
V
DD
OUTPUT
C5
GR40-102
1000pF
C6
10 F 50V
C8
GR40-10
10pF
C9
GR40-102
1000pF
C10
10 F 50V
C11
GR40-270
27pF
C3
GR40-310
31pF
12.5mm
12mm
22.5mm
16mm
3mm
3mm
P
O
, add VS. V
DD
DRAIN SUPPLY VOLTAGE V
DD
(V)
4
34
5
8
16
20
10
28
32
30
26
24
22
18
14
12
10
3
6
7
9
36
38
40
42
44
46
48
50
70
30
40
0
60
50
20
10
80
90
100
I
DS
VS. V
GS
V
GS
(V)
0
1.0
2.0
3.0
5.0
0.5
1.0
1.5
3.0
4.0
2.0
0
0.5
1.5
2.5
3.5
4.5
2.5
TYPICAL PERFORMANCE DATA
EQUIVALENT CIRCUIT
Note: Board material-glass epoxi substrate
micri strip line width=2.8mm,
r
:4.8,t=1.6mm
I
DS
VS. V
DS
V
DS
(V)
0
2
4
6
10
4
8
0
1
3
5
7
9
T
C
=25C
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
5
3.5
4.0
3
2
1
4.5
V
DS
=9.6V
T
C
=25C
P
O
, add VS. Pin
INPUT POWER Pin (dBm)
0
8
34
12
24
16
20
0
32
28
32
30
26
24
22
18
14
12
10
4
4
16
20
26
40
60
70
0
90
100
80
50
10
P
O
2
6
8
36
38
40
30
20
add
2
6
10
14
18
22
28 30
11
12 13
add
P
O
2SK2975
MITSUBISHI RF POWER MOS FET
Nov. 97
S-PARAMETER DATA(TYPICAL)
FREQ.
(MHz)
0.836
0.807
0.819
0.835
0.858
0.872
0.886
0.899
0.909
0.915
0.924
0.930
0.933
0.935
0.944
0.946
0.948
0.949
0.951
0.956
0.957
0.954
0.953
0.954
0.956
0.954
0.954
0.950
0.950
0.950
-115.463
-141.825
-151.724
-156.464
-159.472
-161.678
-163.630
-165.272
-166.371
-167.628
-168.601
-169.541
-170.535
-171.602
-172.164
-173.164
-173.673
-174.773
-175.444
-175.951
-177.019
-177.922
-178.800
-179.511
179.625
178.904
177.726
176.753
175.847
174.793
0.021
0.021
0.020
0.018
0.016
0.014
0.012
0.010
0.010
0.010
0.010
0.011
0.013
0.015
0.017
0.019
0.021
0.024
0.026
0.028
0.031
0.033
0.035
0.038
0.040
0.042
0.045
0.046
0.049
0.051
11.967
-16.870
-37.649
-50.731
-62.227
-72.477
-77.156
-82.951
-79.763
-77.947
-77.893
-76.571
-82.268
-88.668
-93.156
-103.513
-113.867
-124.065
-134.453
-144.025
-157.299
-169.332
179.717
167.673
155.999
144.195
132.079
119.508
107.540
95.929
19.136
10.141
6.556
4.625
3.475
2.709
2.175
1.788
1.501
1.279
1.107
0.969
0.855
0.759
0.690
0.625
0.570
0.525
0.487
0.446
0.411
0.386
0.368
0.337
0.323
0.303
0.287
0.270
0.260
0.244
97.418
65.065
40.799
20.767
2.085
-14.865
-30.984
-46.429
-61.362
-75.599
-89.665
-103.303
-116.569
-130.173
-143.380
-156.123
-169.394
177.293
165.298
152.305
139.706
127.148
115.532
102.465
90.520
78.449
66.533
53.720
41.671
29.932
0.559
0.636
0.680
0.720
0.759
0.778
0.807
0.830
0.839
0.858
0.869
0.874
0.885
0.891
0.893
0.905
0.908
0.909
0.915
0.915
0.915
0.924
0.926
0.925
0.930
0.927
0.929
0.927
0.931
0.927
-143.723
-154.490
-158.082
-159.659
-160.702
-161.884
-163.331
-164.014
-164.860
-165.663
-166.475
-166.923
-167.633
-168.317
-168.904
-169.826
-170.437
-171.046
-171.892
-172.318
-173.122
-174.349
-174.354
-174.989
-175.742
-176.300
-177.658
-178.157
-178.520
-179.724
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
S
11
S
12
S
21
S
22
V
D
=9.6V,P
in
=10dBm
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