Feb.1999
5.0 MAX.
4.4
5.0 MAX.
12.5 MIN.
3.9 MAX.
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
0.7
VOLTAGE
CLASS
TYPE
NAME
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
BCR08AM-14
OUTLINE DRAWING
Dimensions in mm
JEDEC : TO-92
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan,
vending machines, trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
q
I
T (RMS)
............................................................... 0.8A
q
V
DRM
................................................................. 700V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
....................................... 5mA
Symbol
A
A
A
2
s
W
W
V
A
C
C
g
0.8
8
0.26
1
0.1
6
1
40 ~ +125
40 ~ +125
0.23
Symbol
14
700
840
V
V
MAXIMUM RATINGS
V
1. Gate open.
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
DRM
V
DSM
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Parameter
Parameter
Voltage class
Unit
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360
conduction, Tc=67
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Typical value
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Feb.1999
V
2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V
3. Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=1.2A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
V
3
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Limits
Max.
1.0
2.0
2.0
2.0
2.0
5
5
5
--
50
--
!
@
#
!
@
#
Typ.
--
--
--
--
--
--
--
--
--
--
--
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutating
current
(di/dt)
c
=0.4A/ms
3. Peak off-state voltage
V
D
=400V
Voltage
class
V
DRM
(V)
(dv/dt)
c
Min.
Unit
Test conditions
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(di/dt)
c
V
D
(dv/dt)
c
14
700
0.5
V/
s
Min.
--
--
--
--
--
--
--
--
0.1
--
V
2
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Symbol
Parameter
Test conditions
Commutating voltage and current waveforms
(inductive load)
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
2.0
1.5
2.5
3.5
4.0
3.0
5.0
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
T
j
= 25C
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
0
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