Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
I
T (RMS)
..................................................................... 1.0A
V
DRM
....................................................................... 400V
I
FGT
!
....................................................................... 5mA
I
RGT
!
, I
RGT
#
.......................................... 5mA (3mA)
V
5
I
FGT
#
..................................................................... 10mA
BCR1AM-8
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
conduction, T
c
=56
C
V
4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Ratings
1.0
10
0.41
1
0.1
6
1
40 ~ +125
40 ~ +125
0.23
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
8
400
500
Unit
V
V
MAXIMUM RATINGS
V
1. Gate open.
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
5.0 MAX
4.4
5.0 MAX
12.5 MIN
3.9 MAX
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
0.7
1 3 2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
Feb.1999
4.4
2.4
0.8
0.4
1.2 1.6 2.0
2.8 3.2 3.6 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
C
= 25C
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
V
FGT
#
I
FGT
!
I
RGT
!
I
RGT
#
I
FGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=1.5A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
V
4
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
!
@
#
$
!
@
#
$
V
2. Measurment using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V
4. Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
V
5. High sensitivity (I
GT
3mA) is also available. (I
GT
item
1
)
Test conditions
Voltage
class
8
V
DRM
(V)
400
Unit
V/
s
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Min.
2
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutating current
(di/dt)
c
=0.5A/ms
3. Peak off-state voltage
V
D
=400V
Limits
Min.
--
--
--
--
--
--
--
--
--
--
0.1
--
V
3
Max.
1.0
1.6
2.0
2.0
2.0
2.0
5
5
V
5
5
V
5
10
--
50
--
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10
1
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
V
GM
= 6V
P
GM
=
1W
P
G(AV)
= 0.1W
I
GM
= 1A
V
GD
= 0.1V
I
FGT III
I
FGT I
I
RGT I
I
RGT III
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
V
RGT III
, V
FGT III
V
FGT I
, V
RGT I
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
FGT I
I
RGT I
I
RGT III
I
FGT III
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
0
2.0
0
0.4
0.8
1.2
1.6
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
1.6
0
0.2
0.6
1.0
1.4
40
80
140
0.4
0.8
1.2
360
CONDUCTION
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
2 3
10
2
5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
JUNCTION TO AMBIENT
JUNCTION TO CASE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t
C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
Feb.1999
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
120
0
20
40
60
80
100
140
160
TYPICAL EXAMPLE
T
j
= 125C
I QUADRANT
III QUADRANT
160
40
0
40
80
120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T
2
+
, G
TYPICAL EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
T
2
+
, G
+
T
2
, G
T
2
, G
+
160
120
100
60
20
0
1.6
0
0.2
0.6
1.0
1.4
40
80
140
0.4
0.8
1.2
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
NO FINS
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
Feb.1999
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
RGT I
I
FGT III
I
RGT III
I
FGT I
TYPICAL EXAMPLE
10
1
7
5
3
2
10
1
2 3
5 7 10
0
10
0
7
5
3
2
2 3
5 7 10
1
4
4
4
4
10
1
T
C
= 125C
I
T
= 1A
= 500s
V
D
= 200V
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
6
6
6
6
6V
6V
6V
6V
R
G
R
G
R
G
R
G
A
V
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
TEST PROCEDURE
4
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
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