Mar. 2002
Measurement point of
case temperature
T
1
TERMINAL
T
2
TERMINAL
T
2
TERMINAL
GATE TERMINAL
E
10.5 MAX.
4.5
16
MAX.
12.5
MIN.
3.2
0.2
3.8 MAX.
7.0
1.0
0.8
4.5
2.5
2.5
2.6
0.5
1.3
3.6
0.2
VOLTAGE
CLASS
TYPE
NAME
BCR20AM
OUTLINE DRAWING
Dimensions in mm
TO-220
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
q
I
T (RMS)
................................................................ 20A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
.................................... 20mA
Symbol
A
A
A
2
s
W
W
V
A
C
C
g
20
200
167
5
0.5
10
2
40 ~ +125
40 ~ +125
2.0
1. Gate open.
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Parameter
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360
conduction, Tc=109
C
3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Typical value
V
V
MAXIMUM RATINGS
Voltage class
Unit
12
600
720
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
Mar. 2002
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(di/dt)
c
V
D
(dv/dt)
c
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
4. The contact thermal resistance R
th (c-f)
in case of greasing is 1
C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=30A
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
3
4
T
j
=125
C
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Limits
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
--
0.8
--
!
@
#
!
@
#
Typ.
--
--
--
--
--
--
--
--
--
--
--
Min.
--
--
--
--
--
--
--
--
0.2
--
10
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Symbol
Parameter
Test conditions
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-atate commutating current
(di/dt)
c
=10A/ms
3. Peak off-state voltage
V
D
=400V
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 125
C
T
j
= 25
C
10
0
2
3
5 7
10
1
160
80
2
3
5 7
10
2
120
40
200
240
0
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
5
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
160
120
100
60
20
0
0
5
15
25
40
80
140
10
20
30
30
20
10
40
0
0
5
10
20
15
25
30
10
1
10
0
2 3 5 7
2 3 5 7
2 3 57
10
1
10
2
2 3 57
10
3
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
0.0
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
4
4
3
2
60
100
140
40
0
40
80
120
10
0
10
2
5
60
20
20
10
1
5
7
2
3
7
2
3
10
3
5
7
2
3
60
100
140
40
0
40
80
120
10
1
10
2
2 3
5 7
2 3
5 7
2 3
5 7
10
3
10
4
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
10
2
V
GD
= 0.2V
P
GM
= 5W
I
FGT I
I
RGT I
I
RGT III
P
G(AV)
=
0.5W
V
GM
= 10V
V
GT
= 1.5V
I
GM
=
2A
I
FGT I,
I
RGT I,
I
RGT III
GATE CHARACTERISTICS
(
,
AND
)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER CURRENT
(T
j
=
t
C
)
GATE TRIGGER CURRENT
(T
j
=
25
C
)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER VOLTAGE
(T
j
=
t
C
)
GATE TRIGGER VOLTAGE
(T
j
=
25
C
)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
60 40 20 0
20 40 60 80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
3
5
7
3
2
5
4
4
7
3
2
60
20
20
10
2
60
100
140
40
0
40
80
120
10
1
140
40
40
60
20 0
20
60 80 100 120
10
3
7
5
3
2
10
4
7
5
3
2
10
5
7
5
3
2
10
2
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
160
120
100
60
20
0
25
30
0
15
20
40
80
140
5
10
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
(T
j
=
t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
(T
j
=
25
C
)
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (
C)
100 (%)
HOLDING CURRENT
(T
j
=
t
C
)
HOLDING CURRENT
(T
j
=
25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
IH(typ) = 20mA
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
T
2
+
, G
+
T
2
, G
TYPICAL
EXAMPLE
T
2
+
, G
TYPICAL
EXAMPLE
DISTRIBUTION
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
(T
j
=
t
C
)
BREAKOVER VOLTAGE
(T
j
=
25
C
)
TYPICAL EXAMPLE
160 160 t 2.3
100 100 t 2.3
60 60 t 2.3
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
10
1
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
I
FGT I
I
RGT I
I
RGT III
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
10
1
7
2 3
5
7
2 3
5
2 3
5
10
2
10
3
7
10
4
120
0
20
40
60
80
100
140
330
330
330
6
6
6
6V
6V
6V
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TYPICAL EXAMPLE
T
j
= 125
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 125
C
I
T
= 4A
= 500
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/
s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
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