Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BCR25A, BCR25B
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
V
1. Gate open.
I
T (RMS)
...................................................................... 25A
V
DRM
..............................................................400V/500V
I
FGT
!
, I
RGT
#
........................................................ 50mA
I
RGT
!
..................................................................... 75mA
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
I
T
stg
--
--
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine full wave, 360
conduction, T
c
=92
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
BCR25A only
BCR25A (Typical value)
BCR25B (Typical value)
Unit
A
A
A
2
s
W
W
V
A
C
C
kgcm
Nm
g
Ratings
25
250
262
5.0
0.5
10
2.0
20 ~ +125
20 ~ +125
30
2.94
18
23
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
10
500
600
1
2
3
3.3 MIN
(19.6)
1.3 MIN
29 MAX
3.7 MIN
1.9 MAX
15.5 MAX
37 MAX
8.0
17
3
3
1
2
(
14)
8.5
M6
1.0
13 MAX
3
39 MAX
2-
4.2 MIN
3.3 MIN
1.3 MIN
28.5 MAX
2.5 MAX
16 MAX
26 MAX
37 MAX
3
8.5
300.2
14.2 MAX
1
2
3
8.0
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR25B
BCR25A
Feb.1999
4.4
0.4
1.2
2.0
2.8
3.6
0.8
1.6
2.4
3.2
4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
C
= 25C
10
0
2 3
5 7 10
1
80
40
2 3
5 7 10
2
4
4
120
160
320
200
240
280
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=40A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
Unit
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
V
2. Measurement using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
500
Min.
--
20
--
20
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Symbol
R
L
R
L
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=13.5A/ms
3. Peak off-state voltage
V
D
=400V
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
V
3
Max.
5.0
1.6
3.0
3.0
3.0
50
75
50
--
1.0
--
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
1
V
GD
= 0.2V
P
GM
= 5.0W
P
G(AV)
= 0.5W
V
GM
= 10V
V
GT
= 3.0V
I
GM
= 2A
I
FGT I
I
RGT III
I
RGT I
2 3
10
1
5 7 10
0
2 3 5
2 3
10
2
5 7 10
3
7 10
1
2 3 5 7 10
2
1.0
0.8
0.9
0.7
0.6
0.5
0.3
0.4
0.2
0.1
0
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENTVOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
200
160
120
80
40
180
140
100
60
20
0
160
60
20
40
0
20 40
80 100 120 140
TEST PROCEDURE
,
AND
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
50
30
25
15
5
0
40
0
10
20
30
35
10
20
35
40
45
5
15
25
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25A)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
B
X
20-06
100 100 t3.0
120 120 t3.0
NATURAL CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
WITHOUT
MICA PLATE
WITH GREASE
100 (%)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= t
C
)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Feb.1999
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25B)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
100 100 t3.0
120 120 t3.0
160 160 t4.0
NATURAL CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
WITHOUT
MICA PLATE
WITH GREASE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
2
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
3
2
10
3
7
5
3
2
7
5
7
5
3
2
10
1
I
RGT III
I
RGT I
I
FGT I
t
w
0.1s
6V
P.C
6
A
TYPICAL
EXAMPLE
T
j
= 25C
160
120
100
60
20
0
160
0
20
80
120 140
40
80
140
40
60
100
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
I QUADRANT
III QUADRANT
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
t
(di/dt)
C
TYPICAL
EXAMPLE
T
j
= 125C
I
T
= 4A,
= 500s
V
D
= 200V, f = 3Hz
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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