Sep.1998
D
E
E
C
E
G
H
K
R
A
B
B
A
N
F
L
M
C
J
G
P
Q
C
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
T - DIA.
(4 TYP.)
E
G
E
Dimensions
Inches
Millimeters
A
5.12
130.0
B
4.33
0.01
110.0
0.25
C
1.840
46.75
D
1.73+0.04/0.02 44.0+1.0/0.5
E
1.46+0.04/0.02 37.0+1.0/0.5
F
1.42
36.0
G
1.25
31.8
H
1.18
30.0
J
1.10
28.0
K
1.08
27.5
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-28H is a 1400V
(V
CES
), 1000 Ampere Single IGBT
Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
1000
28
Dimensions
Inches
Millimeters
L
0.79
20.0
M
0.77
19.5
N
0.75
19.0
P
0.61
15.6
Q
0.51
13.0
R
0.35
9.0
S
M8 Metric
M8
T
0.26 Dia.
Dia. 6.5
U
M4 Metric
M4
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1400
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
1000
Amperes
Peak Collector Current (T
j
150
C)
I
CM
2000*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
1000
Amperes
Peak Emitter Current**
I
EM
2000*
Amperes
Maximum Collector Dissipation (T
c
= 25
C)
P
c
5800
Watts
Mounting Torque, M8 Main Terminal
8.83~10.8
N m
Mounting Torque, M6 Mounting
1.96~2.94
N m
Mounting Torque, M4 Terminal
0.98~1.47
N m
Weight
1600
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
2.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 100mA, V
CE
= 10V
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 1000A, V
GE
= 15V
3.3
4.5
Volts
I
C
= 1000A, V
GE
= 15V, T
j
= 150
C
3.1
Volts
Total Gate Charge
Q
G
V
CC
= 800V, I
C
= 1000A, V
GE
= 15V
5355
nC
Emitter-Collector Voltage
V
EC
I
E
= 10000A, V
GE
= 0V
4.0
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
200
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
70
nF
Reverse Transfer Capacitance
C
res
40
nF
Resistive
Turn-on Delay Time
t
d(on)
800
ns
Load
Rise Time
t
r
V
CC
= 800V, I
C
= 1000A,
2000
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 3.3
1200
ns
Times
Fall Time
t
f
650
ns
Diode Reverse Recovery Time
t
rr
I
E
= 1000A, di
E
/dt = 2000A/
s
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 1000A, di
E
/dt = 2000A/
s
10.5
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.022
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.050
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.018
C/W
MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
V
CE
, (VOLTS)
I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
0
2
4
6
8
10
1600
1200
800
400
0
9
T
j
= 25
C
V
GE
= 20V
8
12
11
10
13
15
14
V
GE
, (VOLTS)
I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
2000
0
4
8
12
16
20
1600
1200
800
400
0
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
V
GE
, (VOLTS)
V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
I
C
= 2000A
I
C
= 1000A
I
C
= 400A
V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
I
E
, (AMPERES)
T
j
= 25
C
COLLECTOR CURRENT I
C
, (AMPERES)
SWITCHING
TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
10
1
10
3
10
2
10
4
10
2
10
3
10
1
t
r
t
d(off)
V
CC
= 800V
V
GE
=
15V
R
G
= 3.3
T
j
= 125
C
t
d(on)
t
f
V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
10
1
V
GE
= 0V
C
res
C
oes
C
ies
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
3
10
2
10
4
10
2
10
1
I
rr
t
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -2000A/
sec
T
j
= 25
C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
2000
4000
16
12
8
4
0
6000
10000
V
CC
= 800V
V
CC
= 600V
I
C
= 1000A
T
j
= 25
C
8000
1.0
1.5
4.0
10
1
10
4
10
3
3.0
3.5
2.5
2.0
10
2
I
C
, (AMPERES)
V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
400
800
1200
2000
4
3
2
1
0
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
1600
MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
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