Feb.2004
CM100DU-24NFH
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
I
C ...................................................................
100A
V
CES .........................................................
1200V
Insulated Type
2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
C2E1
E2
C1
G2
E2
E1
G1
CM
G1
E1
E2
G2
C2E1
C1
E2
94
16
16
2.5
21.2
7.5
2.5
25
7
17
23
24
11
4
41
8
13
48
23
4
12
13.5
80
0.25
2
6.5
MOUNTING HOLES
3M5NUTS
12mm deep
TAB #110. t=0.5
30
+1
0.5
LABEL
CIRCUIT DIAGRAM
T
C
measured point
Feb.2004
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE1
= V
GE2
= 15V
R
G
= 3.1
, Inductive load switching operation
I
E
= 100A
I
E
= 100A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
*2
(1/2 module)
IGBT part (1/2 module)
FWDi part (1/2 module)
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
20
100
200
100
200
560
730
40 ~ +150
40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
W
C
C
V
N m
N m
g
1
0.5
6.5
--
16
1.3
0.3
--
100
50
250
150
150
--
3.5
0.22
0.47
--
0.17
*3
0.29
*3
31
mA
A
nF
nF
nF
nC
ns
ns
ns
ns
C
V
C/W
C/W
C/W
C/W
C/W
--
--
5.0
5.0
--
--
--
450
--
--
--
--
--
5.0
--
--
--
0.07
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.1
6
V
V
4.5
7.5
ns
Gate-emitter threshold voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c')
Q
R
th(j-c')
R
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
*
1 : T
C
measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
*
4 : T
C
' measured point is just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. No short circuit capability is designed.
G-E Short
C-E Short
Operation
(Note 2)
Pulse
(Note 2)
Operation
(Note 2)
Pulse
(Note 2)
T
C
= 25
C
T
C
' = 25
C
*4
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Mounting torque
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
P
C
'
(Note 3)
T
j
T
stg
V
iso
--
--
--
Unit
Typ.
Limits
Min.
Max.
Test conditions
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Collector cutoff current
Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
*4
External gate resistance
Feb.2004
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
14
10
1
10
0
10
1
10
2
2
3
5
7
2
3
5
7
2
3
5
7
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
V
GE
= 0V
C
ies
C
oes
C
res
0
5
10
15
20
V
CE
= 10V
0
1
6
7
8
9
2
3
4
5
0
40
80
160
200
120
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
200
V
GE
=20
(V)
T
j
= 25
C
12
9
8
11
10
13
0
2
4
6
8
10
6
10
14
18
8
12
16
20
T
j
= 25
C
I
C
= 200A
I
C
= 100A
I
C
= 40A
10
1
10
2
2
3
5
7
0
1
2
4
3
5
10
3
2
3
5
7
T
j
= 25
C
T
j
= 125
C
15
T
j
= 25
C
T
j
= 125
C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
PERFORMANCE CURVES
Feb.2004
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
T
j
= 25
C
t
rr
I
rr
10
1
10
2
2
3
5
7
10
3
2
3
5
7
2
3
5
7
2
3
5
7
10
0
10
2
10
1
10
3
2
3
5
7
t
d(off)
t
d(on)
t
f
t
r
0
5
10
15
20
0
100 200 300 400 500 600 700
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive load
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive load
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
Per unit base =
R
th(jc)
= 0.22
C/W
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
Per unit base =
R
th(jc)
= 0.47
C/W
10
1
10
2
2
3
5
7
10
3
2
3
5
7
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
c)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIME
( ns
)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
ns
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
c)
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