Mar.2003
C1
E2
C2E1
E2
G2
LABEL
3-M5 NUTS
2-
6.5 MOUNTING HOLES
TAB #110. t=0.5
17
48
13
94
23
23
17
29
+0.1
0.5
21.2
7
.5
16
7
16
7
16
80
0.25
41
8
4
12
12
12
E1
G1
4
20
(14)
C2E1
E2
E2
G2
G1
E1
C1
CIRCUIT DIAGRAM
Tc measured point (Base plate)
CM100DY-24NF
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
I
C ...................................................................
100A
V
CES .........................................................
1200V
Insulated Type
2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Mar.2003
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE1
= V
GE2
= 15V
R
G
= 3.1
, Inductive load switching operation
I
E
= 100A
I
E
= 100A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
*2
(1/2 module)
Tc measured point is just under the chips
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
20
100
200
100
200
650
40 ~ +150
40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
C
C
V
N m
N m
g
1
0.5
2.5
--
23
2
0.45
--
120
80
450
350
150
--
3.2
0.19
0.35
--
0.13
*3
31
mA
A
nF
nF
nF
nC
ns
ns
ns
ns
C
V
C/W
C/W
C/W
C/W
--
--
1.8
2.0
--
--
--
675
--
--
--
--
--
5.0
--
--
--
0.07
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.1
7
V
V
6
8
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c')
Q
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
*
1 : Tc measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : Tc' measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, T
C
' = 113
C
*3
Pulse
(Note 2)
Pulse
(Note 2)
T
C
= 25
C
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
--
Unit
Typ.
Limits
Min.
Max.
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Test conditions
Mar.2003
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
200
160
40
120
80
0
0
4
6
8
10
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
T
j
= 25
C
12
11
10
9
V
GE
=
20V
2
15
13
4
3
2
1
0
0
200
150
100
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
50
10
8
6
4
2
0
20
12
14
6
8
10
16
18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25
C
I
C
= 200A
I
C
= 40A
I
C
= 100A
10
1
2
3
5
7
10
2
2
3
5
7
10
3
0
1
2
4
3
5
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
T
j
= 25
C
T
j
= 125
C
10
1
10
0
10
1
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
5
7
10
3
2
3
5
7
2
3
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
Mar.2003
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive load
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
c)
TMIE (s)
IGBT part:
Per unit base =
R
th(jc)
= 0.19
C/W
FWDi part:
Per unit base =
R
th(jc)
= 0.35
C/W
0
4
8
16
12
20
0
400
200
800
1000
600
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
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