Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
CM10AD00-12H
I
C .....................................................................
10A
V
CES ............................................................
600V
Insulated Type
CIB Module
3
Inverter + 3
Converter + Brake
Thyristor + Thermistor + Current shunt
APPLICATION
AC & DC motor controls, General purpose inverters
PPS
PPS
LABEL
CIRCUIT DIAGRAM
GUP
EUP
GUN
U
GVP
EVP
GVN
V
GWP
EWP
GWN
W
E
R
S
T
P1
P2
GT
P
N1
N
(sense terminal)
TH1 TH2
B
GB
t=0.6
MAIN CIRCUIT TERMINAL
t=0.6
CONTROL CIRCUIT TERMINAL
P2
GT
GWN
GVN
GUN
E
TH2
GB
W
V
U
TH1
B
T
S
R
GWP
EWP
GVP
EVP
GUP
EUP
P
N
N1
P1
(1)
0.8
1
0.6
13
53
0.5
12
13
10
4
90
0.3
56
18
18
55
100
90
0.25
2.54
2.54
2.54
2.54
8
8
8
8
2.54
8
8
8
8
7.5
2.54
2.54
2.54
7.62
7.62
8
8
8
8
8
8
7.5
5
2.5
6
2.5
6
2-R5
2-
4.5
0.25
MOUNTING HOLES
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
resistor
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
T
C
= 25
C
PULSE
(Note. 2)
T
C
= 25
C
PULSE
(Note. 2)
T
C
= 25
C
Symbol
Parameter
Collector Current
Emitter Current
Conditions
Unit
V
V
A
A
A
A
W
Rating
600
20
10
20
10
20
40
V
CES
V
GES
I
C
I
CM
I
E (Note.1)
I
EM (Note.1)
P
C (Note.3)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
600
20
10
20
39
600
10
G-E Short
C-E Short
T
C
= 25
C
PULSE
(Note. 2)
T
C
= 25
C
Clamp diode part
Clamp diode part
Symbol
Parameter
Collector Current
Conditions
Unit
V
V
A
A
W
V
A
Rating
V
CES
V
GES
I
C
I
CM
P
C (Note.3)
V
RRM
I
FM (Note.3)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
800
220
10
200
165
3
rectifying circuit
1/2 cycle at 60Hz, peak value, Non-repetitive
Value for one cycle of surge current
Symbol
Parameter
Conditions
Unit
Rating
V
V
A
A
A
2
s
V
RRM
E
a
I
O
I
FSM
I
2
t
V
DRM
V
RRM
I
T(AV)
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
di/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate forward voltage
Peak gate reverse voltage
Critical rate of rise of on-state Current
Symbol
Parameter
Conditions
Unit
Rating
V
V
A
W
W
A
V
V
A/
s
MAXIMUM RATINGS
(Tj = 25
C)
INVERTER PART
BRAKE PART
CONVERTER PART
THYRISTOR PART
T
j
T
j
T
stg
V
iso
--
--
Junction temperature
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
40 ~ +150
40 ~ +125
40 ~ +125
2500
1.47 ~ 1.96
120
Inverter, brake, converter part
Thyristor part
AC 1 min.
Mounting M4 screw
Typical value
Symbol
Parameter
Conditions
Unit
Rating
C
C
C
V
Nm
g
COMMON RATING
I
TSM
Surge (non-repetitive)
on-state current
Single-phase, half-wave 180
conduction
I
G
=100mA, V
D
=400V, dI
G
/dt=1A/
s
800
800
10
10
1
3
10
5
100
1/2 cycle at 60Hz, peak value Non-repetitive
200
A
Sep. 2000
mA
A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
C
C/W
C/W
Typ.
V
V
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
1
0.5
2.8
--
1.0
0.9
0.2
--
120
300
200
300
2.8
110
--
3.1
4.9
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 150
C
V
CC
= 300V, I
C
= 10A, V
GE
= 15V
V
CC
= 300V, I
C
= 10A
V
GE1
= V
GE2
= 15V
R
G
= 63
Resistive load
I
E
= 10A, V
GE
= 0V
I
E
= 10A, V
GE
= 0V
di
E
/ dt = 20A /
s
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10A, V
GE
= 15V
(Note.4)
V
CE
= 10V
V
GE
= 0V
--
--
2.1
2.15
--
--
--
30
--
--
--
--
--
--
0.03
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC(Note.1)
t
rr (Note.1)
Q
rr (Note.1)
R
th(j-c)Q
R
th(j-c)R
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
Limits
Min.
Max.
Unit
6
4.5
7.5
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
V
V
1
0.5
2.8
--
1.0
0.9
0.2
--
2.8
3.2
5.0
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 150
C
V
CC
= 300V, I
C
= 10A, V
GE
= 15V
I
F
= 10A, Clamp diode part
IGBT part
Clamp diode part
mA
A
nF
nF
nF
nC
V
C/W
C/W
--
--
2.1
2.15
--
--
--
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-c)Q
R
th(j-c)R
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Unit
6
4.5
7.5
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10A, V
GE
= 15V
(Note.4)
V
CE
= 10V
V
GE
= 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
V
R
= V
RRM
, T
j
= 150
C
I
F
= 10A
Per 1/6 module
mA
V
C/W
--
--
--
--
--
--
I
RRM
V
FM
R
th(j-c)
Symbol
Parameter
Test conditions
8
1.5
3.1
Typ.
Limits
Min.
Max.
Unit
Typ.
Limits
Min.
Max.
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
INVERTER PART
BRAKE PART
CONVERTER PART
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
I
DRM
I
RRM
I
TM
I
GT
V
GT
I
H
R
th(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
Holding current
Thermal resistance
THYRISTOR PART
dv/dt
V
D
=800V
V
R
=800V
I
T
=10A, instantaneous means
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
T
j
=125
C, V
D
=540V, exp. waveform
Critical rate of rise of off-state
Voltage
1
1
1.45
50
3
--
1.75
mA
mA
V
mA
V
mA
C/W
--
--
--
--
--
50
--
--
--
--
--
--
--
--
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
500
--
--
V/
s
--
--
Resistance
Temperature coefficient
Measured between N-N1
m
%/
C
5.9
0.048
--
--
R
--
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
RESISTOR PART
--
--
Resistance
B Constant
T
C
= 25
C
Resistance at 25
C, 50
C
(Note.5)
k
K
100
4000
--
--
R
TH
B
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
THERMISTOR PART
Note. 1 I
E
, V
EC
, t
rr
, Q
rr
, di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3 Junction temperature (T
j
) should not increase beyond 150
C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR
1
-InR
2
)/(1/T
1
-1/T
2
)
R
1
: Resistance at T
1
(K)
R
2
: Resistance at T
2
(K)
*
1 : Typical value is measured by using Shin-etsu Silicone "G-746".
--
Contact thermal resistance
Case to fin, Thermal compound applied
*
1
(1 module)
C/W
0.05
--
R
th(c-f)
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
COMMON RATING
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