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Электронный компонент: CM1200HA-50H

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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
q
I
C ................................................................
1200A
q
V
CES .......................................................
2500V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HA-50H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
E
G
C
E
C
CIRCUIT DIAGRAM
C
C
E
E
E
C
190
171
57
0.25
57
0.25
57
0.25
20
40
124
0.25
140
6 - M8 NUTS
8 -
7MOUNTING HOLES
G
E
C
CM
41.25
20.25
79.4
3 - M4 NUTS
28
30
15
40
5.2
61.5
61.5
13
5
38
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C, IGBT part
--
--
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
2500
20
1200
2400
1200
2400
10400
40 ~ +150
40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Symbol
Item
Conditions
Unit
Ratings
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Nm
kg
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 1250V, I
C
= 1200A, V
GE
= 15V
V
CC
= 1250V, I
C
= 1200A
V
GE1
= V
GE2
= 15V
R
G
= 2.5
Resistive load switching operation
I
E
= 1200A, V
GE
= 0V
I
E
= 1200A
die / dt = 2400A /
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
I
C
= 120mA, V
CE
= 10V
I
C
= 1200A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Min
Typ
Max
15
0.5
4.16
--
--
--
--
--
1.60
2.00
2.50
1.00
3.77
1.20
--
0.012
0.024
--
mA
A
nF
nF
nF
C
s
s
s
s
V
s
C
K/W
K/W
K/W
--
--
3.20
3.60
120
13.2
4.0
5.4
--
--
--
--
2.90
--
250
--
--
0.006
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr
(Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
6.0
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.5
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
2400
800
400
0
10
0
2
4
6
1200
8
2000
1600
2400
800
400
0
20
0
4
8
12
1200
16
2000
1600
0
5
4
3
2
1
2400
0
400
1200
800
1600 2000
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
C
I
C
= 2400A
I
C
= 1200A
I
C
= 480A
10
1
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE VS. V
CE
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
T
j
= 25
C
V
GE
= 13V
V
GE
= 11V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 12V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
T
j
= 25
C
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1250V, V
GE
=
15V
R
G
= 2.5
, T
j
= 125
C
Inductive load
t
d(on)
t
r
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
s
)
COLLECTOR CURRENT I
C
(A)
V
CC
= 1250V, T
j
= 125
C
Inductive load
V
GE
=
15V, R
G
= 2.5
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
s
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
7
5
3
2
10
2
7
5
5
3
2
10
3
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.012K/ W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
c)
TIME (s)
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.024K/ W
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
c)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
20
16
12
8
4
0
8000
10000
6000
0
2000
4000
V
GE
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
V
CC
= 1250V
I
C
= 1200A