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Электронный компонент: CM1200HA-66H

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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug.1998
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
q
I
C ................................................................
1200A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HA-66H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
E
G
C
E
C
CIRCUIT DIAGRAM
190
171
57
0.25
57
0.25
57
0.25
20
40
124
0.25
140
6 - M8 NUTS
8 -
7MOUNTING HOLES
CM
C
C
E
C
E
G
E
E
C
41.25
20.25
79.4
3 - M4 NUTS
28
30
15
40
5.2
61.5
61.5
13
5
38
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug.1998
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
C)
Collector current
Emitter current
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
3300
20
1200
2400
1200
2400
10420
40 ~ +150
40 ~ +125
6000
6.67 ~ 8.24
2.84 ~ 3.43
0.88 ~ 1.08
2.2
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Nm
kg
G-E Short
C-E Short
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Main terminal to Base, AC for 1 minute
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Symbol
Parameter
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E
(Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 1650V, I
C
= 1200A, V
GE
= 15V
V
CC
= 1650V, I
C
= 1200A
V
GE1
= V
GE2
= 15V
R
G
= 2.5
Resistive load switching operation
I
E
= 1200A, V
GE
= 0V
I
E
= 1200A
die / dt = 2400A /
s
IGBT part
FWDi part
Case to fin, conductive grease applied
I
C
= 120mA, V
CE
= 10V
I
C
= 1200A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
15
0.5
5.72
--
--
--
--
--
1.60
2.00
2.50
1.00
4.29
1.20
--
0.012
0.024
--
mA
A
nF
nF
nF
C
s
s
s
s
V
s
C
C/W
C/W
C/W
--
--
4.40
4.80
130
7
3
10
--
--
--
--
3.30
--
300
--
--
0.006
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
6.0
4.5
7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 1)
t
rr
(Note 1)
Q
rr (Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Note 1. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug.1998
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
T
j
=25C
2400
800
400
0
10
5
1
0
2
3
4
6
7
1200
8
9
2000
1600
T
j
=25C
V
GE
=13V
V
GE
=12V
V
GE
=11V
V
GE
=10V
V
GE
=9V
V
GE
=8V
V
GE
=7V
V
GE
=14V
V
GE
=15V
V
GE
=20V
V
GE
=15V
T
j
= 25C
T
j
= 125C
2400
800
400
0
20
10
2
0
4
6
8
12 14
1200
16 18
2000
1600
V
CE
=10V
T
j
= 25C
T
j
= 125C
0
8
6
4
2
2500
0
500
1000
1500
2000
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)