Sep.1998
B
C
F
D
Q
A
S
S
G
K
L
M
E
E
H
H
P - DIA. (2 TYP.)
R - M5 THD (3 TYP.)
N
C2E1
J
N
J
J
C1
E2
G1
E1
E2
G2
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
Dimensions
Inches
Millimeters
A
3.70
94.0
B
3.150
0.01
80.0
0.25
C
1.89
48.0
D
1.18 Max.
30.0 Max.
E
0.90
23.0
F
0.83
21.2
G
0.71
18.0
H
0.67
17.0
J
0.63
16.0
Dimensions
Inches
Millimeters
K
0.51
13.0
L
0.47
12.0
M
0.30
7.5
N
0.28
7.0
P
0.256 Dia.
Dia. 6.5
Q
0.31
8.0
R
M5 Metric
M5
S
0.16
4.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150DY-12H
is a 600V (V
CES
), 150 Ampere
Dual IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
150
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM150DY-12H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
150
Amperes
Peak Collector Current
I
CM
300*
Amperes
Emitter Current** (T
C
= 25
C)
I
E
150
Amperes
Peak Emitter Current**
I
EM
300*
Amperes
Maximum Collector Dissipation (T
C
= 25
C, T
j
150
C)
P
c
600
Watts
Mounting Torque, M5 Main Terminal
1.47 ~ 1.96
N m
Mounting Torque, M6 Mounting
1.96 ~ 2.94
N m
Weight
270
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 15mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 150A, V
GE
= 15V
2.1
2.8**
Volts
I
C
= 150A, V
GE
= 15V, T
j
= 150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 150A, V
GE
= 15V
450
nC
Emitter-Collector Voltage
V
EC
I
E
= 150A, V
GE
= 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
15
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
5.3
nF
Reverse Transfer Capacitance
C
res
3
nF
Resistive
Turn-on Delay Time
t
d(on)
200
ns
Load
Rise Time
t
r
V
CC
= 300V, I
C
= 150A,
550
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 4.2
300
ns
Times
Fall Time
t
f
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 150A, di
E
/dt = 300A/
s
110
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 150A, di
E
/dt = 300A/
s
0.41
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.21
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.47
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.065
C/W
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
0
2
4
6
8
10
150
50
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
100
200
250
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
0
4
8
12
16
20
200
150
100
50
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
250
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
100
200
300
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 60A
I
C
= 300A
I
C
= 150A
0
0.8
1.6
2.4
3.2
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 4.2
T
j
= 125C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -300A/
sec
T
j
= 125C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
100
200
300
400
500
16
12
8
4
0
V
CC
= 200V
I
C
= 150A
600
V
CC
= 300V
T
j
= 25C
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.21
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.47
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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