Mar.2002
CM150E3U-24F
APPLICATION
Brake
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
I
C ...................................................................
150A
V
CES .........................................................
1200V
Insulated Type
1-element in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
RTC
CIRCUIT DIAGRAM
C2E1
E2
C1
G2
E2
(8.25)
(18)
25
25
21.5
2.5
108
14
14
14
93
0.25
48
0.25
3M6 NUTS
22
8.5
18
7
7
18
18
TAB #110. t=0.5
29
+1.0
0.5
LABEL
1MAX
0.5
62
15.85
10.5
6
G2
G1
Tc measured point
E2
E 2
C 1
C2 E1
E1
0.5
CM
4
6.5 MOUNTING HOLES
4
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
1200
20
150
300
150
300
600
1200
150
300
40 ~ +150
40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
V
V
A
A
W
V
A
C
C
V
N m
N m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Clamp diode part
T
C
= 25
C
Clamp diode part
Pulse
Clamp diode part
(Note 2)
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
V
RRM
I
F
I
FM
T
j
T
stg
V
iso
--
--
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 600V, I
C
= 150A, V
GE
= 15V
V
CC
= 600V, I
C
= 150A
V
GE1
= V
GE2
= 15V
R
G
= 2.1
, Inductive load switching operation
I
E
= 150A
I
E
= 150A, V
GE
= 0V
IGBT part
FWDi part
Tc measured point is just under the chips
I
F
= 150A, Clamp diode part
I
F
= 150A
V
CC
= 600V, V
GE1
= V
GE2
= 15V
R
G
= 2.1
, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied
*2
(1/2 module)
I
C
= 15mA, V
CE
= 10V
I
C
= 150A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1
20
2.4
--
59
2.6
1.5
--
150
80
450
300
150
--
3.2
21
0.21
0.24
0.13
*3
3.2
150
--
0.24
--
mA
A
nF
nC
ns
ns
C
V
C/W
V
ns
C
C/W
--
--
1.8
1.9
--
--
--
1650
--
--
--
--
--
6.0
--
--
--
--
--
--
--
6.0
--
0.04
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2.1
--
--
--
--
--
--
--
--
6
V
V
5
7
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
*1
Contact thermal resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
G
R
th(j-c)
Q
R
th(j-c)
R
R
th(j-c')
Q
V
FM
t
rr
Q
rr
R
th(j-c)
R
R
th(c-f)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Unit
Typ.
Limits
Min.
Max.
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
V
GE
= 20V
T
j
= 25
C
15
11
10
9.5
9
8.5
8
200
100
250
300
150
50
0
0
0.5
1
1.5
2
2.5
3
3.5
4
3
2.5
2
1.5
0.5
1
0
0
200
100
300
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0.5
1
1.5
2
2.5
3
3.5
T
j
= 25
C
5
4
3
2
1
0
20
6
8
12
16
10
14
18
I
C
= 300A
I
C
= 150A
I
C
= 60A
T
j
= 25
C
10
1
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
V
GE
= 0V
C
ies
C
oes
C
res
10
1
10
2
5
7
10
3
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 2.1
T
j
= 125
C
Inductive load
2
3
t
d(off)
t
d(on)
t
f
t
r
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE AND CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
0
6
4
2
10
8
16
14
12
20
18
0
500
1500
2500
1000
2000
V
CC
= 400V
V
CC
= 600V
I
C
= 150A
10
1
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
3
2
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 2.1
T
j
= 25
C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
c)
(
C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
IGBT part: Per unit base = R
th(jc)
= 0.21
C/W
FWDi part: Per unit base = R
th(jc)
= 0.24
C/W
CLAMP Di part: Per unit base = R
th(jc)
= 0.24
C/W
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