Sep.1998
J
B
A
H
D
E
S
S
S
C
R
F
N
G
W
V
U
U
GuP
(EuP)
GuN
V
W
GvP
(EvP)
GvN
GwP
(EwP)
GwN
P
N
(EuN)
(EvN)
(EwN)
GuP
N
P
SuP
GvP SvP
GwP SwP
GuN
GvN
GwN
SuN
SvN
SwN
L
K
K
M
T - DIA.
(2 TYP.)
Q
P
Q
TAB #250, t = 0.8
TAB #110, t = 0.5
Dimensions
Inches
Millimeters
A
3.54
90.0
B
2.99
0.01
76.0
0.2
C
2.52
64.0
D
1.54
39.0
E
0.98
25.0
F
0.90
23.0
G
0.87
22.0
H
0.75
19.0
J
0.71
18.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-12H
is a 600V (V
CES
), 20 Ampere Six-
IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
20
12
Dimensions
Inches
Millimeters
K
0.67
17.0
L
0.63
16.0
M
0.59
15.0
N
0.56
14.1
P
0.51
13.0
Q
0.43
11.0
R
0.26
6.5
S
0.24
6.0
T
0.22 Dia.
Dia. 5.5
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM20TF-12H
Units
Junction Temperature
T
j
40 to +150
C
Storage Temperature
T
stg
40 to +125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
20
Amperes
Peak Collector Current
I
CM
40*
Amperes
Emitter Current** (T
C
= 25
C)
I
E
20
Amperes
Peak Emitter Current**
I
EM
40*
Amperes
Maximum Collector Dissipation (T
C
= 25
C, T
j
150
C)
P
c
125
Watts
Mounting Torque, M5 Mounting
1.47 ~ 1.96
N m
Weight
150
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 2mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 20A, V
GE
= 15V
2.1
2.8**
Volts
I
C
= 20A, V
GE
= 15V, T
j
= 150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 20A, V
GE
= 15V
60
nC
Emitter-Collector Voltage
V
EC
I
E
= 20A, V
GE
= 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
2.0
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
0.7
nF
Reverse Transfer Capacitance
C
res
0.4
nF
Resistive
Turn-on Delay Time
t
d(on)
120
ns
Load
Rise Time
t
r
V
CC
= 300V, I
C
= 20A,
300
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 31
200
ns
Times
Fall Time
t
f
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 20A, di
E
/dt = 40A/
s
110
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 20A, di
E
/dt = 40A/
s
0.05
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
1.00
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
3.50
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.092
C/W
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
10
9
40
30
20
10
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
40
30
20
10
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
10
20
30
40
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 8A
I
C
= 40A
I
C
= 20A
0
0.8
1.6
2.4
3.2
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 31
T
j
= 125C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = 40A/
sec
T
j
= 25C
10
1
10
0
10
-1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
20
40
60
80
100
16
12
8
4
0
V
CC
= 200V
V
CC
= 300V
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
1
10
-2
V
GE
= 0V
10
1
C
ies
C
oes
C
res
10
-1
10
0
I
C
= 20A
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Sep.1998
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 1.0
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 3.5
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
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