Aug. 1999
CM300DU-12F
RTC
RTC
CIRCUIT DIAGRAM
C2E1
E2
C1
G2
E2
E1
G1
E1
E2
G2
G1
CM
C1
E2
C2E1
LABEL
4-
6. 5 MOUNTING HOLES
3-M6 NUTS
108
29
+1.0
0.5
62
18
7
18
7
18
8.5
22
4
93
0.25
48
0.25
2.8
4
7.5
6
15
6
0.5
0.5
0.5
0.5
14
14
14
25
2.5
21.5
25
Tc measured point
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
I
C ...................................................................
300A
V
CES ............................................................
600V
Insulated Type
2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Aug. 1999
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
V
CC
= 300V, I
C
= 300A
V
GE1
= V
GE2
= 15V
R
G
= 2.1
, Inductive load switching operation
I
E
= 300A
I
E
= 300A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compoundapplied
*2
(1/2 module)
Tc measured point is just under the chips
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
600
20
300
600
300
600
780
40 ~ +150
40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
V
V
W
C
C
V
N m
N m
g
A
A
1
40
2.2
--
81
5.4
3.0
--
250
120
500
250
150
--
2.6
0.16
0.24
--
0.10
V
3
21
mA
A
nF
nC
C
V
C/W
--
--
1.6
1.6
--
--
--
1860
--
--
--
--
--
5.2
--
--
--
0.04
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2.1
6
V
V
ns
5
7
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c')
Q
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
--
Unit
Typ.
Limits
Min.
Max.
--
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Test conditions
Aug. 1999
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
0.5
1.5
2.5
3.5
1
2
3
4
0
100
200
300
400
500
600
0
7.5
15
11
8
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0
0.5
1
1.5
2
2.5
3
3.5
4
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
2.5
3
2
1.5
1
0.5
0
600
0
200
400
5
4
3
2
1
0
16
18
20
6
8
10
12
14
10
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
1
10
0
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
V
GE
=20V
9
8.5
9.5
T
j
=25
C
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
I
C
= 600A
I
C
= 120A
I
C
= 300A
T
j
= 25
C
T
j
= 25
C
C
ies
C
oes
C
res
V
GE
= 0V
V
CC
= 300V
V
GE
=
15V
R
G
= 2.1
T
j
= 125
C
Conditions:
t
d(off)
t
d(on)
t
f
t
r
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
PERFORMANCE CURVES
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