Sep.1998
Dimensions
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66
0.01
93.0
0.25
E
1.88
0.01
48.0
0.25
F
0.87
22.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
Dimensions
Inches
Millimeters
K
0.71
18.0
L
0.87
22.0
M
0.33
8.5
N
0.10
2.5
P
0.85
21.5
Q
0.98
25.0
R
0.11
2.8
S
0.25 Dia.
6.5 Dia.
T
0.6
15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-12H is a
600V (V
CES
), 400 Ampere Dual
IGBT Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
400
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM400DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM
A
S(4 - Mounting
Holes)
B
3 - M6 Nuts
E
D
Q
K
K
K
F
R
Q
N
G
P
H
J
U
C
L
M
H
T
C
Measured
Point
E2
G1
E1
G2
E2
C1
C2E1
T
Sep.1998
MITSUBISHI IGBT MODULES
CM400DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM400DU-12H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
400
Amperes
Peak Collector Current (T
j
150
C)
I
CM
800*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
400
Amperes
Peak Emitter Current**
I
EM
800*
Amperes
Maximum Collector Dissipation (T
c
= 25
C)
P
c
1130
Watts
Mounting Torque, M6 Main Terminal
3.5~4.5
N m
Mounting Torque, M6 Mounting
3.5~4.5
N m
Weight
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 15V, T
j
= 25
C
2.4
3.0
Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125
C
2.6
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 400A, V
GE
= 15V
800
nC
Emitter-Collector Voltage*
V
EC
I
E
= 400A, V
GE
= 0V
2.6
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
35.2
nF
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
19.2
nF
Reverse Transfer Capacitance
C
res
5.2
nF
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 300V, I
C
= 400A,
250
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
600
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 1.6
, Resistive
350
ns
Times
Fall Time
t
f
Load Switching Operation
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 400A, di
E
/dt = -800A/
s
160
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 400A, di
E
/dt = -800A/
s
0.96
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module
0.11
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module
0.18
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.020
C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
300
600
16
12
8
4
0
900
1200
V
CC
= 300V
V
CC
= 200V
I
C
= 400A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
I
rr
t
rr
di/dt = -800A/
sec
T
j
= 25C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 1.6
T
j
= 125C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
0.6
1.0
1.4
1.8
2.6
2.2
3.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 160A
I
C
= 800A
I
C
= 400A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
160
320
480
640
4
3
2
1
0
800
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
640
480
320
160
0
800
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
480
160
0
320
540
800
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
2
4
6
8
10
V
GE
= 20V
15
14
13
12
11
8
T
j
= 25
o
C
10
9
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