Sep.1998
Dimensions
Inches
Millimeters
A
3.7
94.0
B
3.15
0.01
80.0
0.25
C
1.89
48.0
D
0.94
24.0
E
0.28
7.0
F
0.67
17.0
G
0.91
23.0
H
0.91
23.0
J
0.43
11.0
K
0.71
18.0
L
0.16
4.0
Dimensions
Inches
Millimeters
M
0.47
12.0
N
0.53
13.5
O
0.1
2.5
P
0.63
16.0
Q
0.98
25.0
R
1.18 +0.04/-0.02 30.0 +1.0/-0.5
S
0.3
7.5
T
0.83
21.2
U
0.16
4.0
V
0.51
13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75DU-24H is a
1200V (V
CES
), 75 Ampere Dual
IGBT Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
75
24
G1
E1
G2
G2
E2
E1
G1
E2
G2
C1
C2E1
A
G
F
CM
V
2 - Mounting
Holes
(6.5 Dia.)
E
U
H
E2
C1
C2E1
C
3-M5 Nuts
D
B
J
K
L
N
M
P
P
Q
O
O
T
C
Measured
Point
R
S
T
TAB#110 t=0.5
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM75DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM75DU-24H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
75
Amperes
Peak Collector Current
I
CM
150*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
75
Amperes
Peak Emitter Current**
I
EM
150*
Amperes
Maximum Collector Dissipation (T
c
= 25
C, T
j
150
C)
P
c
600
Watts
Mounting Torque, M5 Main Terminal
2.5~3.5
N m
Mounting Torque, M6 Mounting
3.5~4.5
N m
Weight
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 7.5mA, V
CE
= 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 75A, V
GE
= 15V, T
j
= 25
C
2.9
3.7
Volts
I
C
= 75A, V
GE
= 15V, T
j
= 125
C
2.85
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
280
nC
Emitter-Collector Voltage*
V
EC
I
E
= 75A, V
GE
= 0V
3.2
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics,T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
11
nF
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
3.7
nF
Reverse Transfer Capacitance
C
res
2.2
nF
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 75A,
100
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
200
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 4.2
, Resistive
250
ns
Times
Fall Time
t
f
Load Switching Operation
350
ns
Diode Reverse Recovery Time**
t
rr
I
E
= 75A, di
E
/dt = -150A/
s
300
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 75A, di
E
/dt = -150A/
s
0.41
C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module
0.21
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module
0.47
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.035
C/W
MITSUBISHI IGBT MODULES
CM75DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM75DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
2
4
6
8
10
COLLECTOR CURRENT, I
C
, (AMPERES)
100
50
25
0
75
125
150
15
12
11
8
10
9
V
GE
= 20V
T
j
= 25
o
C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
125
100
75
50
25
0
150
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
25
50
75
125
100
4
3
2
1
0
150
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 30A
I
C
= 150A
I
C
= 75A
1.0
1.5
2.0
3.0
2.5
3.5
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
oes
C
res
C
ies
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
3
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 4.2
T
j
= 125C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -150A/
sec
T
j
= 25C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
100
15
10
5
0
200
300
400
V
CC
= 600V
V
CC
= 400V
I
C
= 75A
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