Sep.1998
Dimensions
Inches
Millimeters
A
4.02
0.02
102
0.5
B
3.58
0.02
91.0
0.5
C
3.15
0.01
80.0
0.25
D
2.913
0.01
74.0
0.25
E
1.69
43.0
F
1.18+0.06/-0.02 30.0+1.5/-0.5
G
1.18
30.0
H
1.16
29.5
J
1.06
27.0
K
0.96
24.5
L
0.87
22.0
M
0.79
20.0
N
0.67
17.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-12H
is a 600V (V
CES
), 75 Ampere
Six-IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
75
12
Dimensions
Inches
Millimeters
P
0.65
16.5
Q
0.55
14.0
R
0.47
12.0
S
0.43
11.0
T
0.39
10.0
U
0.33
8.5
V
0.32
8.1
X
0.24
6.0
Y
0.22 Dia.
Dia. 5.5
Z
M4 Metric
M4
AA
0.08
2.0
AB
0.28
7.0
Outline Drawing and Circuit Diagram
AB
F
H
V
TAB #110, t = 0.5
C
L
E
A
G
N
D
U
AA
L
B
P
G
K
J
T
R
M
M
AA
S
X
Q
X
Q
X
N
Z - M4 THD
(7 TYP.)
Y DIA. (4 TYP.)
GuP E uP
GvP E vP
GwP E wP
GuN E uN
GvN E vN
GwN E wN
P
P
N
N
U
V
W
P
GuP
EuP
GuN
EuN
U
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
N
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM75TF-12H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
75
Amperes
Peak Collector Current
I
CM
150*
Amperes
Emitter Current** (T
C
= 25
C)
I
E
75
Amperes
Peak Emitter Current**
I
EM
150*
Amperes
Maximum Collector Dissipation (T
C
= 25
C, T
j
150
C)
P
c
310
Watts
Mounting Torque, M4 Main Terminal
0.98 ~ 1.47
N m
Mounting Torque, M5 Mounting
1.47 ~ 1.96
N m
Weight
540
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 7.5mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 75A, V
GE
= 15V
2.1
2.8**
Volts
I
C
= 75A, V
GE
= 15V, T
j
= 150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 75A, V
GE
= 15V
225
nC
Emitter-Collector Voltage
V
EC
I
E
= 75A, V
GE
= 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
7.5
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
2.6
nF
Reverse Transfer Capacitance
C
res
1.5
nF
Resistive
Turn-on Delay Time
t
d(on)
120
ns
Load
Rise Time
t
r
V
CC
= 300V, I
C
= 75A,
300
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 8.3
200
ns
Times
Fall Time
t
f
300
ns
Diode Reverse Recovery Time
t
rr
I
E
= 75A, di
E
/dt = 150A/
s
110
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 75A, di
E
/dt = 150A/
s
0.20
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.40
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.90
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.033
C/W
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
150
0
2
4
6
8
10
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
50
100
10
9
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
50
100
150
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
0
4
8
12
16
20
100
50
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 150A
I
C
= 75A
I
C
= 30A
0
0.8
1.6
2.4
3.2
4.0
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
10
1
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
res
C
oes
C
ies
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
0
V
CC
= 300V
V
GE
= 15V
R
G
= 8.3
T
j
= 125C
t
d(on)
t
r
t
d(off)
t
f
10
1
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
I
rr
t
rr
di/dt = -150A/
sec
T
j
= 25
o
C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
50
100
150
200
250
16
12
8
4
0
V
CC
= 200V
300
V
CC
= 300V
I
C
= 75A
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.4
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.9
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
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