Sep.2000
TYPE
NAME
VOLTAGE
CLASS
5.0 MAX
4.4
5.0 MAX
12.5 MIN
3.9 MAX
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
0.7
1
3 2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
2
1
3
1
2
3
CATHODE
ANODE
GATE
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
CR02AM
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
4
200
300
160
200
160
6
300
400
240
300
240
I
T (AV)
........................................................................ 0.3A
V
DRM
.................................................... 200V/300V/400V
I
GT
......................................................................... 100
A
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
a
=30
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
40 ~ +125
40 ~ +125
0.23
V
1. With Gate-to-cathode resistance R
GK
=1k
8
400
500
320
400
320
Sep.2000
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
R
GK
A3
A2
V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
V
3. I
GT
, V
GT
measurement circuit.
SWITCH
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied, R
GK
=1k
T
a
=25
C, I
TM
=0.6A, instantaneous value
T
a
=25
C, V
D
=6V, I
T
=0.1A
V
3
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
C, V
D
=6V, I
T
=0.1A
V
3
T
j
=25
C, V
D
=12V, R
GK
=1k
Junction to ambient
Unit
mA
mA
V
V
V
A
mA
C/W
Typ.
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
V
2. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
B
20 ~ 50
C
40 ~ 100
Item
I
GT
(
A)
A
1 ~ 30
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
Limits
Min.
--
--
--
--
0.2
1
--
--
Max.
0.1
0.1
1.6
0.8
--
100
V
2
3
180
PERFORMANCE CURVES
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
3
1
5
7
9
0
2.6
1.0
1.4
1.8
2.2
1.2
1.6
2.0
2.4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
T
a
= 25
C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
10
2
10
2
10
0
10
1
10
1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
2 3 5 7
2 3 5 7
10
1
10
2
2 3 5 7
2 3 5 7
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100
A
(T
j
= 25
C)
P
GM
= 0.1W
P
G(AV)
= 0.01W
V
GD
= 0.2V
I
FGM
= 0.1A
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
200
0
80
100
120
140
160
180
40
60
20
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
200
160
140
120
60
80
20
0
160
40 20
20
80
140
120
40
100
180
0
60
40
100
# 1
# 2
I
GT
(25
C)
# 1 32
A
# 2 9
A
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
160
40 20
20
80
140
120
0.2
0.5
0.9
0
60
40
100
TYPICAL EXAMPLE
DISTRIBUTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.4
0
0.1
0.2
0.3
360
= 30
60
120
90
180
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (
C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
TIME (s)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
See
3
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t
C)
GATE TRIGGER CURRENT (T
j
= 25
C)
100 (%)
GATE CURRENT
( T
j
= t
C
)
GATE CURRENT
( T
j
= 25
C
)
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.5
0
0.1
0.2
0.3
0.4
= 30
60
120
90
180
DC
270
360
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0.5
0
0.1
0.2
0.3
0.4
360
= 30
60
120
90
180
DC
270
NATURAL
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0.4
0
0.1
0.2
0.3
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
0.5
0
0.1
0.2
0.3
0.4
360
= 30
60
120
90
180
RESISTIVE LOADS
NATURAL
CONVECTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.5
0
0.1
0.2
0.3
0.4
= 30
60
120
90
180
360
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
160
40
0
40
80
120 140
20
20
60
100
TYPICAL EXAMPLE
R
GK
= 1k
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (
C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (
C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (
C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 2
5
C
)
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
120
0
80
100
40
60
20
# 1
# 2
TYPICAL EXAMPLE
# 1 I
GT
(25
C)=10
A
# 2 I
GT
(25
C)=66
A
T
j
= 125
C, R
GK
= 1k
160
120
100
40
60
20
0
160
40 20
20
80
140
120
80
140
0
60
40
100
TYPICAL EXAMPLE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
200
300
400
500
100
# 1
# 2
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
120
0
80
100
40
60
20
T
j
= 125
C
TYPICAL EXAMPLE
60
20
40
60
0
20 40
80 100 120 140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
TYPICAL
EXAMPLE
DISTRIBUTION
10
3
2 3 4
10
0
5 7 10
1
2 3 4 5 7 10
2
7
5
4
3
2
7
5
4
3
2
10
2
10
1
# 1
# 2
TYPICAL EXAMPLE
I
GT
(25
C)
# 1 10
A
# 2 66
A
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
BREAKOVER VOLTAGE
( R
GK
=
r
k
)
BREAKOVER VOLTAGE
( R
GK
= 1k
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
HOLDING CURRENT
( R
GK
=
r
k
)
HOLDING CURRENT
( R
GK
= 1k
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
GATE CURRENT PULSE WIDTH (
s)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t
C
)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25
C
)
T
j
= 25
C
I
H
(25
C)=1mA
I
GT
(25
C)=25
A
T
j
= 25
C
T
j
= 25
C
TYPICAL EXAMPLE
I
GT
(25
C) I
H
(1k
)
# 1 13
A 1.6mA
# 2 59
A 1.8mA
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