Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR08AS
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
I
T (AV)
........................................................................ 0.8A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 100
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8 (marked "AD")
400
500
320
400
320
12 (marked "AF")
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
a
=51
C
V
2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
mg
Ratings
1.26
0.8
10
0.42
0.5
0.1
6
6
0.3
40 ~ +125
40 ~ +125
48
V
1. With Gate-to-cathode resistance R
GK
=1k
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
4.40.1
1.50.1
1.60.2
0.40.07
0.8 MIN
2.50.1
3.90.3
0.4
+0.03
0.05
1
2
3
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.50.07
1.50.1 1.50.1
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
V
2. Soldering with ceramic plate (25mm
25mm
t0.7).
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
A)
A
1 ~ 30
C
40 ~ 100
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied, R
GK
=1k
T
j
=125
C, V
DRM
applied, R
GK
=1k
T
a
=25
C, I
TM
=2.5A, instantaneous value
T
a
=25
C, V
D
=6V, I
T
=0.1A
V
4
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
C, V
D
=6V, I
T
=0.1A
V
4
T
j
=25
C, V
D
=12V, R
GK
=1k
Junction to ambient
V
2
Unit
mA
mA
V
V
V
A
mA
C/W
Typ.
--
--
--
--
--
--
1.5
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
--
--
--
--
0.2
1
--
--
Max.
0.5
0.5
1.5
0.8
--
100
V
3
3
65
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
R
GK
A3
A2
V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
V
4. I
GT
, V
GT
measurement circuit.
SWITCH
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
3
1
5
7
9
0
5
0
1
4
2
3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
a
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
2
10
0
10
1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
2 3 57
2 3 57
10
1
2 3 57
10
2
2 3 57
2 3
10
1
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100A
(T
j
= 25C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.2V
I
FGM
= 0.3A
160
60
20
40
0
20 40
80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
120
40 20
20
80
0.2
0.5
0.9
0
60
40
100
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
= 30 60
120
90
180
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60 120
90 180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
360
= 180
65C/ W
90C/ W
R
th( j a)
= 200C/ W
NATURAL
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
160
40
0
40
80
120 140
20
20
60
100
R
GK
= 1k
TYPICAL EXAMPLE
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30 60
120
90
180
360
RESISTIVE LOADS
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30 60 120
90 180
270
DC
360
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
= 30
120
90
180
60
RESISTIVE LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
DC
= 30
120
180
270
60
90
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
1
10
0
10
2
4.0
0
2.0
2.5
3.0
3.5
1.0
1.5
0.5
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
80
100
120
40
60
20
TYPICAL EXAMPLE
T
j
= 125C
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
BREAKOVER VOLTAGE
( R
GK
=
r
k
)
BREAKOVER VOLTAGE
( R
GK
= 1k
)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
160
0
80
100
120
140
40
60
20
T
j
= 125C
R
GK
= 1k
TYPICAL EXAMPLE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
500
0
300
400
100
200
10
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
V
D
= 100V
R
L
= 47
R
GK
= 1k
T
a
= 25C
TYPICAL EXAMPLE
60
20
40
60
0
20 40
80 100 120 140
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
HOLDING CURRENT
( R
GK
=
r
k
)
HOLDING CURRENT
( R
GK
= 1k
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
TURN-ON TIME VS. GATE CURRENT
TURN-ON TIME (s)
GATE CURRENT (mA)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
HOLDING CURRENT (mA)
GATE TRIGGER CURRENT (A)
DISTRIBUTION
I
GT
(25C) = 35A
R
GK
= 1k
TYPICAL EXAMPLE
# 1
T
j
= 25C
T
j
= 25C
TYPICAL EXAMPLE
I
GT
(25C) I
H
(1k
)
# 1 25A 0.9mA
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
40
30
15
10
5
35
25
20
0
160
0
40
80
120 140
20
60
100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
V
D
= 50V, V
R
= 50V
I
T
= 2A, R
GK
= 1k
TYPICAL EXAMPLE
DISTRIBUTION
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
TURN-OFF TIME (s)
JUNCTION TEMPERATURE (C)
160
120
100
40
60
20
0
160
40 20
20
80
140
120
80
140
0
60
40
100
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
THERMAL IMPEDANCE VS.
BOARD DIMENSIONS
THERMAL IMPEDANCE
(C/
W)
BOARD DIMENSIONS (mm)
REGULAR SQUARE ONE SIDE
320
240
120
80
40
280
200
160
0
80
0
20
40
60
70
10
30
50
t0.7
ALUMINUM
BOARD
WITHOUT EPOXY PLATE
10
10 EPOXY PLATE
WITH COPPER FOIL
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t
C
)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25
C
)
10
2
10
0
10
1
2
4
3
5 7
10
2
2
4
3
5 7
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
T
j
= 25C
TYPICAL EXAMPLE
I
GT
(DC)
# 1 10A
# 2 65A
# 1
# 2
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