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Электронный компонент: CR10CY-12

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Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR10CY
APPLICATION
Inverter, DC choppers, DC static switches, pulse generator
Symbol
V
RRM
V
RSM
V
DRM
V
DSM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
Unit
V
V
V
V
8
400
500
400
500
12
600
720
600
720
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine half wave, 180
C conduction, T
c
=66
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
D
=1/2V
DRM
, I
TM
=30A, I
G
=0.1A, T
c
=25
C, f=60Hz
Typical value
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
kgcm
Nm
g
Ratings
15.5
10
200
165
100
5.0
0.5
10
5
2
30 ~ +125
30 ~ +125
30
2.94
8.8
MAXIMUM RATINGS
I
T (AV)
......................................................................... 10A
V
DRM
..............................................................400V/600V
I
GT
..........................................................................40mA
(16.2)
1.9 MIN
10 MAX
1
2
3
1
2
3
CATHODE
ANODE
GATE
OUTLINE DRAWING
Dimensions
in mm
2.0 MIN
M6
1
14
8.7 MAX
3 MIN
19.5 MAX
26 MAX
LOCK WASHER M6
BRASS NUT M6
1
Note: Mica washer and spacer are
provided only upon request.
SOLDERLESS TERMINAL
TELEGRAPH WIRE
1.04~2.63mm
2
MICA WASHER
32
6
t0.25
SPACER
9
6.2
t1
3
2
1
11 MAX
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=30A, Instantaneous value
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=25
C, V
D
=100V, I
T
=10A, I
G
=0.1A
I
T
=10A, V
R
=50V, V
D
=1/2V
DRM
, T
j
=125
C, dv/dt=20V/
s
Junction to case
Case to fin, greased
Unit
mA
mA
V
V/
s
V
V
mA
s
s
C/W
C/W
Typ.
--
--
--
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
t
gt
t
q
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Turn-off time
Thermal resistance
Contact thermal resistance
Limits
Min.
--
--
--
100
--
0.25
--
--
--
--
--
Max.
4.0
4.0
2.5
--
2.5
--
40
10
15
2.0
0.55
10
0
2 3
5 7 10
1
80
40
2 3
5 7 10
2
4
4
120
160
200
60
20
100
140
180
0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
c
= 125C
T
c
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2 3
10
4
5 710
3
2 3 5 710
2
2 3 5 710
1
0
0.4
0.8
1.6
2.0
2.4
1.2
2 3
10
1
5 7 10
0
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
V
GT
= 2.5V
P
GM
= 5W
V
GD
= 0.25V
V
FGM
= 10V
I
FGM
=
2A
P
G(AV)
=
0.5W
I
GT
T
j
= 125C
25C
30C
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
10
5
1
0
2
3
4
6
7
8
9
160
120
100
60
20
0
40
80
140
= 180
= 90
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
160 160 t4
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
40
30
15
10
5
35
25
20
0
0
16
8
2
4
6
10
12
14
360
RESISTIVE,
INDUCTIVE
LOADS
= 30
60
120
90
180
160
120
60
40
20
140
100
80
0
0
16
8
2
4
6
10
12
14
= 30 60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
40
30
15
10
5
35
25
20
0
16
0
60
120
90
180
8
2
4
6
10
12
14
360
RESISTIVE
LOADS
= 30
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
20
10
0
0
20
40
60
120
160
80 100
30
40
50
60
70
80
90
100
140
I
T
= 10A,
tw = 100s
di/dt = 8A/s
V
R
= 50V, V
D
= 1/2V
DRM
dv/dt = 20V/s
TYPICAL EXAMPLE
40
30
15
10
5
35
25
20
0
0
8
2
4
6
10
12
14
16
270
DC
= 30
120
90
360
60
180
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0
8
2
4
6
10
12
14
16
360
= 30 60
120
90
180
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
0
8
2
4
6
10
12
14
16
360
90
= 180
RESISTIVE
LOADS
NATURAL
CONVECTION
160 160 t4
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
0
0
8
2
4
6
10
12
14
16
360
RESISTIVE,
INDUCTIVE
LOADS
= 30 60
120
180 270 DC
90
160
120
60
40
20
140
100
80
0
0
8
2
4
6
10
12
14
16
160 160 t4
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
90
DC
= 180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
TURN-OFF TIME
(
T
j
=
t
C
)
TURN-OFF TIME
(
T
j
=
125
C
)
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
160
120
60
40
20
140
100
80
0
0
8
2
4
6
10
12
14
16
T
j
= 125C
tw = 100s
di/dt = 8A/s
V
R
= 50V, V
D
= 1/2V
DRM
dv/dt = 20V/s
TYPICAL EXAMPLE
TURN-OFF TIME VS.
ON-STATE CURRENT
ON-STATE CURRENT (A)
100 (%)
TURN-OFF TIME
( I
T
= iA
)
TURN-OFF TIME
( I
T
= 10A
)