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Электронный компонент: CR12BM

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Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
APPLICATION
Automatic strobe flasher
I
T (AV)
......................................................................... 12A
V
DRM
..............................................................400V/600V
I
GT
..........................................................................30mA
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=91
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
Ratings
18.8
12.0
360
544
5
0.5
6
10
2
40 ~ +125
40 ~ +125
1.5
10.5 MIN
OUTLINE DRAWING
Dimensions
in mm
TO-220C
1.5 MAX
4
1.3
TYPE
NAME
VOLTAGE
CLASS
3
1
2
0.5
2.6
2.5 2.5
0.8
12.5 MIN
3.8 MAX
10.5
4.5
1
Measurement
point of case
temperature
1
2
3
4
CATHODE
ANODE
GATE
ANODE
8.6
Feb.1999
10
0
2 3
5 7 10
1
160
80
2 3
5 7 10
2
4
4
240
320
400
120
40
200
280
360
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
c
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-c)
R
th (j-a)
Test conditions
T
j
=125
C, V
DRM
applied
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=40A
T
j
=25
C, V
D
=6V, I
T
=1A
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, I
T
=1A
T
j
=25
C, V
D
=12V
Junction to case
Junction to ambient
Unit
mA
mA
V
V
V
mA
mA
C/W
Typ.
--
--
--
--
--
--
15
--
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
--
--
--
--
0.2
--
--
--
--
Max.
2.0
2.0
1.6
1.5
--
30
--
1.2
70
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
0
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3
10
1
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
1
V
FGM
= 6V
V
GT
= 1.5V
I
GT
= 30mA
P
GM
= 5W
V
GD
= 0.2V
I
FGM
= 2A
P
G(AV)
= 0.5W
160
60
20
40
0
20 40
80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
160
120
60
40
20
140
100
80
0
16
0
4
8
12
14
2
6
10
360
= 30
60
90
180
120
RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0
32
0
8
16
24
28
4
12
20
360
= 30
60
120
90
180
RESISTIVE,
INDUCTIVE
LOADS
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
0
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
JUNCTION TO AMBIENT
JUNCTION TO CASE
1.6
1.2
1.0
0.6
0.4
0
120
40 20
20
80
0.2
0.8
1.4
0
60
40
100
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
TYPICAL
EXAMPLE
DISTRIBUTION
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT
(T
j
=
t
C
)
GATE TRIGGER CURRENT
(T
j
=
25
C
)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
= 30
60
90
180
120
RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0
32
0
8
16
24
28
4
12
20
= 30
60
90
180
360
120
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
32
0
8
16
24
28
4
12
20
180
360
60
90
120
= 30
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
= 30
60
90
180
120
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0
32
0
8
16
24
28
4
12
20
360
= 30
180
DC
270
90
120
60
RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0
32
0
8
16
24
28
4
12
20
= 30
60
120
90
180 270
DC
360
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10.0
7.0
3.0
2.0
1.0
8.0
9.0
6.0
4.0
5.0
0
100
0
20
50
70
90
80
10
30 40
60
#
T
a
= 25C
V
D
= 100V
R
L
= 12
TYPICAL
EXAMPLE
I
GT
(25C)
# I
GT
= 11.2mA
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
160
0
80
100
120
140
40
60
20
#
T
j
= 125C
TYPICAL
EXAMPLE
I
GT
(25C)
# I
GT
= 10.1mA
200
140
60
40
20
160
180
120
80
100
0
160
40
0
60
100
140
120
20
20 40
80
TYPICAL EXAMPLE
160
60
20
40
0
20 40
80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
# 2
# 1
I
GT
(25C)
# 1 10.6mA
# 2 11.6mA
TYPICAL EXAMPLE
200
140
60
40
20
160
180
120
80
100
0
160
40
0
60
100
140
120
20
20 40
80
TYPICAL EXAMPLE
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60
180
120
90
360
270
DC
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
TURN-ON TIME VS. GATE CURRENT
TURN-ON TIME (s)
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE
(T
j
=
t
C
)
REPETITIVE PEAK REVERSE VOLTAGE
(T
j
=
25
C
)
Feb.1999
800
600
500
300
100
0
2000
0
800
1200
1600
200
400
700
400
T
a
= 25C
REPETITIVE
CYCLE
T > 5s
C
M
350V
I
TM
10
2
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
0.1s
tw
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
MAXIMUM ALLOWABLE PEAK ON-STATE
CURRENT VS.
DISCHARGE CAPACITOR
DISCHARGING CAPACITOR C
M
(F)
PEAK ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE