Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR20F
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
V
V
V
V
V
V
8
400
480
320
400
480
320
12
600
720
480
600
720
480
16
800
960
640
800
980
640
20
1000
1200
800
1000
1000
800
24
1200
1350
960
1200
1200
960
I
T (AV)
......................................................................... 20A
V
DRM
............................. 400V/600V/800V/1000V/1200V
I
GT
..........................................................................50mA
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=86
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
D
=1/2V
DRM
, I
TM
=60A, I
G
=0.1A. T
j
=25
C, f=60Hz
Typical value
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
kgcm
Nm
g
Ratings
31.5
20
300
380
100
5.0
0.5
10
5
2
30 ~ +125
30 ~ +125
30
2.94
20
MAXIMUM RATINGS
APPLICATION
DC motor control, electric furnace control, static switches, DC supply
LOCK WASHER
NUT
2
3
(22)
8
19
3.5
1.6
1
1.5
3
14
3.5
TYPE NAME
2
3
2.1
11
14
36
25.5
4.4
M6
1
Note: Mica washer and spacer are
provided only upon request.
SOLDERLESS TERMINAL
TELEGRAPH WIRE
2.63~6.64mm
2
OUTLINE DRAWING
Dimensions
in mm
1
2
3
1
2
3
CATHODE
ANODE
GATE
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=60A, Instantaneous value
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
c
=25
C, V
D
=100V, I
T
=15A, I
G
=0.1A
Junction to case
Case to fin
Unit
mA
mA
V
V
V
V
mA
s
C/W
C/W
Typ.
--
--
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
t
gt
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical-rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Thermal resistance
Contact thermal resistance
Limits
Min.
--
--
--
50
--
0.25
--
--
--
--
Max.
4.0
4.0
1.8
--
3.0
--
50
10
1.0
0.4
0
0.5 1.0
2.5 3.0 3.5 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
1.5 2.0
125C
T
c
= 25C
320
240
200
120
40
80
160
280
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
V
GT
= 3V
P
GM
= 5W
V
GD
= 0.25V
V
FGM
= 10V
I
FGM
=
2A
P
G(AV)
=
0.5W
I
GT
T
j
=
125C
25C
30C
40
30
15
10
5
35
25
20
0
32
0
16
4
8
12
20
24
28
= 30
60
120
360
90
180
RESISTIVE LOADS
0
4
32
16
8
12
20
24
28
20
15
10
5
25
30
35
40
45
50
0
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
130
110
80
70
60
120
100
90
50
0
32
16
4
8
12
20
24
28
360
RESISTIVE,
INDUCTIVE
LOADS
= 30 60
120
90
180
160
120
60
40
20
140
100
80
0
0
32
16
4
8
12
20
24
28
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
BX40-06 FIN
120 120 t3
= 180
= 90
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
130
110
80
70
60
120
100
90
50
32
0
16
4
8
12
20
24
28
360
RESISTIVE
LOADS
= 30 60
120
90
180
Feb.1999
20
M6
1
2
-
6.5
NAME PLATE
(38.5)
30
16
19.5
9.5
3
NAME PLATE
125
115
99
50
60
120
40
CR20F BLOCK FIN BX40-06 OUTLINE DRAWING (Unit: mm)
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
0
5
40
20
10
15
25
30
35
20
15
10
5
25
30
35
40
45
50
0
= 30
60
120
90
180
DC
270
360
RESISTIVE,
INDUCTIVE
LOADS
130
110
80
70
60
120
100
90
50
0
20
5
10
15
25
30
35
360
40
= 30
60
90 180
120
270
DC
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
32
0
16
4
8
12
20
24
28
90
= 180
360
RESISTIVE
LOADS
NATURAL
CONVECTION
BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
0
40
0
20
5
10
15
25
30
35
180
= 90
DC
BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
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