Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR2AM
APPLICATION
Control of household equipment such as electric blandets, leakage protector, static switch, other
general purpose control applications, ignitors
I
T (AV)
........................................................................... 2A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 100
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=75
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, Surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
Ratings
3.15
2.0
20
1.6
0.5
0.1
6
6
0.3
40 ~ +125
40 ~ +125
1.6
V
1. With Gate-to-cathode resistance R
GK
=1k
TYPE NAME
@
VOLTAGE
CLASS
2 3
1
3.20.2
3.20.1
10 MAX
4
23.70.5
8 MAX
1.20.1
4 MAX
12 MIN
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4.5 MAX
1.550.1
0.5
0.5
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-202
2
1
3
1
2
3
4
CATHODE
ANODE
GATE
ANODE
4
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied, R
GK
=1k
T
c
=25
C, I
TM
=4A, Instantaneous value
T
j
=25
C, V
D
=6V, I
T
=0.1A
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
C, V
D
=6V, I
T
=0.1A
Junction to case
V
2
Unit
mA
mA
V
V
V
A
C/W
Typ.
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
R
th (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
ELECTRICAL CHARACTERISTICS
V
2. The method point for case temperature is at the anode tab 1.5mm away from the molded case.
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
A)
A
1 ~ 30
C
40 ~ 100
Limits
Min.
--
--
--
--
0.2
1
--
Max.
0.1
0.1
1.8
0.8
--
100
V
3
10
10
0
2 3
5 7 10
1
8
4
2 3
5 7 10
2
4
4
12
16
20
6
2
10
14
18
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
T
c
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
2
10
0
10
1
10
1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
5 7
2 3 5 7
10
1
10
2
2 3 5 7
2 3 5 7
2 3 5
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100A
(T
j
= 25C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.15V
I
FGM
= 0.3A
160
120
60
40
20
140
100
80
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
360
RESISTIVE,
INDUCTIVE
LOADS
= 30
60
120
90
180
60 40 20 0
20 40 60 80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
120
40 20
20
80
0.2
0.5
0.9
0
60
40
100
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
5.0
3.5
1.5
1.0
0.5
4.5
4.0
3.0
2.5
2.0
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
360
= 30
60
120
90
180
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
3
2
10
2
7
5
3
2
7
5
10
0
7
5
3
2
JUNCTION TO AMBIENT
JUNCTION TO CASE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
5.0
3.5
1.5
1.0
0.5
4.5
4.0
3.0
2.5
2.0
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
= 30 60
120
90
180
360
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60
120
90
180
360
WITHOUT FIN
RESISTIVE
LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60
120
90
180
WITHOUT FIN
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
= 30
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
50 50 t1.2
ALL FINS ARE
BLACK PAINTED
IRON AND GREASED
160
120
60
40
20
140
100
80
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
= 30
90
360
180
RESISTIVE LOADS
NATURAL
CONVECTION
50 50 t1.2
ALL FINS ARE
BLACK PAINTED
IRON AND GREASED
160
120
60
40
20
140
100
80
0
3.2
0
0.8
1.6
2.4 2.8
0.4
1.2
2.0
360
RESISTIVE
LOADS
= 30 60 90 120 180
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
500
0
200
300
400
100
# 1
40 20
0
20
40
60
80 100 120
160
0
80
100
120
140
40
60
20
TYPICAL EXAMPLE
140
120
60
20
40
60
0
20 40
80 100
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
V
D
= 12V
R
GK
= 1k
40 20
0
20
40
60
80 100 120
160
0
80
100
120
140
40
60
20
R
GK
= 1k
TYPICAL EXAMPLE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
80
100
120
40
60
20
TYPICAL EXAMPLE
T
j
= 125C
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
BREAKOVER VOLTAGE
( R
GK
=
r
k
)
BREAKOVER VOLTAGE
( R
GK
= 1k
)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
0
120
40
60
80
100
20
T
j
= 125C
R
GK
= 1k
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
HOLDING CURRENT
( R
GK
=
r
k
)
HOLDING CURRENT
( R
GK
= 1k
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t
C
)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25
C
)
TYPICAL EXAMPLE
I
GT
(25C)
# 1 19A
# 2 66A
# 2
# 1
DISTRIBUTION
I
GT
(25C) = 35A
TYPICAL EXAMPLE
# 2
TYPICAL EXAMPLE
I
GT
(25C) I
H
(1k
)
# 1 25A 0.9mA
# 2 48A 1.3mA
T
j
= 25C
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
0
10
1
10
3
7
5
3
2
2 3
5 7
10
2
4
10
4
7
5
3
2
4
4
2 3
5 7
4
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
# 1
# 2
TYPICAL EXAMPLE
I
GT
(DC)
# 1 19A
# 2 66A
T
j
= 25C
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