Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR3PM
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
V
1. With gate to cathode resistance R
GK
=220
.
I
T (AV)
........................................................................... 3A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 100
A
V
iso
........................................................................ 1500V
UL Recognized: File No. E80276
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
V
iso
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=103
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a
=25
C, AC 1 minute, each terminal to case
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
V
Ratings
4.7
3.0
70
24.5
0.5
0.1
6
6
0.3
40 ~ +125
40 ~ +125
2.0
1500
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
(T
a
=25
C, unless otherwise noted)
8
400
500
320
400
320
12
600
720
480
600
480
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
3.20.2
1.3 MAX
0.8
2.54
13.5 MIN
3.6
5.0
1.2
8.5
10.5 MAX
5.2
4.5
2 3
1
2
1
3
1
2
3
CATHODE
ANODE
GATE
17
2.54
2.8
0.5
2.6
Measurement point of
case temperature
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
R
th (j-c)
Test conditions
T
j
=125
C, V
RRM
applied, R
GK
=220
T
j
=125
C, V
DRM
applied, R
GK
=220
T
c
=25
C, I
TM
=10A, instantaneous value
T
j
=25
C, VD=6V, I
T
=0.1A
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=220
T
j
=25
C, V
D
=6V, I
T
=0.1A
Junction to case
V
2
Unit
mA
mA
V
V
V
A
C/ W
Typ.
--
--
--
--
--
--
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Limits
Min.
--
--
--
--
0.1
1
--
Max.
2.0
2.0
1.6
0.8
--
100
V
3
4.1
ELECTRICAL CHARACTERISTICS
10
0
2 3
5 7 10
1
40
20
2 3
5 7 10
2
4
4
60
80
100
30
10
50
70
90
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
c
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
V
2. The contact thermal resistance R
th (c-f)
is 0.5
C/W with greased.
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
B
20 ~ 50
C
40 ~ 100
Item
I
GT
(
A)
A
1 ~ 30
The above values do not include the current flowing through the 220
resistance between the gate and cathode.
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
10
0
5 710
0
2 3
5 710
1
2 3
5 710
2
2 3
2 3
10
1
7
10
1
7
5
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 200A
(T
j
= 25C)
I
FGM
= 0.3A
P
GM
= 0.5W
V
GD
= 0.1V
P
G(AV)
= 0.1W
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
0
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
120
60
20
40
0
20
40
80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
# 2
# 1
I
GT
(25C)
# 1 45A
# 2 18A
TYPICAL EXAMPLE
1.0
0.7
0.6
0.3
0.2
0
120
40 20
20
80
0.1
0.5
0.4
0.8
0.9
0
60
40
100
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
8
6
3
2
1
7
5
4
0
5.0
0
1.0
4.0
2.0
3.0
360
= 30
60
120
90
180
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
5.0
0
1.0
4.0
2.0
3.0
= 30
120
60
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
40 20 0
20 40 60 80 100 120 140 160
160
0
80
100
120
140
40
60
20
R
GK
= 220
TYPICAL EXAMPLE
160
60
20
40
0
20 40
80 100 120 140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
V
D
= 12V
R
GK
= 1k
TYPICAL EXAMPLE
DISTRIBUTION
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
= 180
90
120
60
30
NATURAL
CONVECTION
WITHOUT FIN
RESISTIVE,
INDUCTIVE
LOADS
8
6
3
2
1
7
5
4
0
5.0
0
4.0
1.0
2.0
3.0
360
RESISTIVE
LOADS
= 30
60
90
180
120
160
120
60
40
20
140
100
80
0
5.0
0
4.0
1.0
2.0
3.0
360
RESISTIVE
LOADS
180
60 90
= 30
120
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
360
RESISTIVE
LOADS
NATURAL
CONVECTION
WITHOUT FIN
= 180
90
120
60
30
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
10
1
10
1
7
5
3
2
10
0
2 3
5 7 10
1
10
0
7
5
3
2
2 3
5 7 10
2
4
4
4
4
#
V
D
= 100V
T
a
= 25C
TYPICAL
EXAMPLE
I
GT
(25C)
# 33A
10
2
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
0.1s
tw
TYPICAL EXAMPLE
40 20 0
20 40 60 80 100 120 140 160
160
0
80
100
120
140
40
60
20
TYPICAL EXAMPLE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
400
0
200
250
300
350
100
150
50
# 2
# 1
I
GT
(25C)
# 1 25A
# 2 50A
TYPICAL EXAMPLE
80
60
30
20
10
70
50
40
0
160
0
40
80
120 140
20
60
100
I
T
= 2A
V
D
= 50V, V
R
= 50V
dv/dt = 5V/s
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
TYPICAL
EXAMPLE
DISTRIBUTION
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
HOLDING CURRENT
( R
GK
=
r
k
)
HOLDING CURRENT
( R
GK
= 1k
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
TURN-ON TIME VS. GATE CURRENT
TURN-ON TIME (s)
GATE CURRENT (mA)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
TURN-OFF TIME (s)
JUNCTION TEMPERATURE (C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t
C
)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25
C
)
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