MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
Sep. 2000
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
MAXIMUM RATINGS
(Tc = 25
C)
CT90AM-18
OUTLINE DRAWING
Dimensions in mm
TO-3PL
q
V
CES ...............................................................................
900V
q
I
C .........................................................................................
60A
q
Simple drive
q
Integrated Fast-recovery diode
q
Small tail loss
q
Low V
CE
Saturation Voltage
20MAX.
5
2
6
26
20.6MIN.
2
1
0.5
2.5
4.0
3.2
5.45 5.45
1
3
GATE
COLLECTOR
EMITTER
COLLECTOR
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
900
25
30
60
120
40
250
40 ~ +150
40 ~ +150
V
GE
= 0V
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
V
V
V
A
A
A
W
C
C
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
T
j
T
stg
Symbol
Parameter
Conditions
Ratings
Unit
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
Sep. 2000
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
I
CES
I
GES
V
GE (th)
V
CE (sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
E
tail
I
tail
V
EC
t
rr
R
th (ch-c)
R
th (ch-c)
mA
A
V
V
pF
pF
pF
s
s
s
s
mJ/pls
A
V
s
C/W
C/W
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
4.0
1.55
11000
180
125
0.05
0.10
0.20
0.30
0.6
6
--
0.5
--
--
1.0
0.5
6.0
1.95
--
--
--
--
--
--
--
1.0
12
3.0
2.0
0.5
4.0
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
V
CE
= 900V, V
GE
= 0V
V
GE
=
20V, V
CE
= 0V
V
CE
= 10V, I
C
= 6mA
I
C
= 60A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CC
= 300V, I
C
= 60A, V
GE
= 15V, R
G
= 0
I
CP
= 60A, T
j
= 125
C, dv/dt = 200V/
s
I
E
= 60A, V
GE
= 0V
I
E
= 60A, dis/dt = 20A/
s
Junction to case
Junction to case
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