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Электронный компонент: FA01215

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FA01215
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band
small size handheld radio.
FEATURES
Low voltage
3.0V
High gain
24dB(typ.)
High efficiency
50%
High power
34.5dBm
APPLICATION
GSM IV
Unit:mm
0.50.15
6
14.7
14.2
2
3.5
3.5
2
2
0.6
2.5
2.5
2.5
2.5 1.95
2.25
0.250.1
2
3
1
4
5
RF INPUT
V
G1,2
V
D1
V
D2
RF OUTPUT
GND(FIN)
3
2
1
4
5
6
Typ
Max
Min
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
O
ht
Igt
rin
2fo,3fo
Total efficiency
Note1: Pin=13dBm,V
D
1=V
D
2=3.0V(Pulse: P.W.=580s,duty=1/8),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note2: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(Pulse: P.W.=580s,duty=1/8),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note3: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(DC),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note4: P
O
=0~34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(DC),V
G
1,2=-2.0V,
L=3:1(all phase),Z
G
=50
Note5: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=4.5V(Pulse:P.W.=580s,duty=1/8),V
G
1,2=-2.0V,
L=6:1(all phase),Z
G
=50
915
0
MHz
dBm
%
890
Note1
mA
dB
dBc
Symbol
Parameter
Ratings
-30 to +90
V
D
P
in
T
C
(op)
T
stg
Unit
Drain voltage
Input power
Operation case temperature.
Storage temperature.
4.5
15
-20 to +85
V
dBm
C
C
Frequency
Output power
Total gate current
Return loss
2nd harmonics, 3rd harmonics
34.5
-6
-30
50
-3

Ta
Condition
P
O
34.5dBm
Z
G
=Z
L
=50
25C
25C
Note: Each maximum ratings is guaranteed independently and P.W.=580s,duty=1/8 operation.
No degradation or destroy
OSC.T
Stability
VSWR.T
Load VSWR tolerance
Note2
Note3
Note4
Note5
-60
dBc
FA01215
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
EQUIVALENT CIRCUIT
1ST DRAIN
2ND DRAIN
RF OUTPUT
GND(FIN)
RF INPUT
1ST GATE
2ND GATE
MATCHING
CIRCUIT
MATCHING
CIRCUIT
MATCHING
CIRCUIT
TYPICAL CHARACTERISTICS
(Ta=25C)
OUTPUT POWER, TOTAL EFFICIENCY
vs INPUT POWER
INPUT POWER P
in
(dBm)
-30 -25 -20
-10
-5
5
20
40
0
40
50
60
30
20
10
-15
35
30
25
15
10
0
-5
70
80
90
T
P
O
V
D
=3.0V
V
G
=-2.0V
f=902.5MHz
0
5
10 15