FA01219A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
FEATURES
Low voltage
3.5V
High gain
22.5B
High efficiency
50%
High power
30.5dBm
APPLICATION
PDC0.8GHz
Unit:mm
RF INPUT RF OUTPUT
V
D1
GND
GND
GND
V
D2
V
G1,2
2.0
6.0
0.8
10.0
GND
GND
tolerance:0.2
Typ
Max
Min
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
in
in
ACP100
Total drain current
958
-6
720
MHz
dBm
mA
925
Po=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50
(
/4DQPSK)
640
5
dB
dBc
dBc
Symbol
Parameter
Ratings
-30 to +90
V
D
P
in
T
C
(op)
T
stg
Unit
Drain voltage
Input power
Operation case temperature
Storage temperature
4.5
15
-20 to +85
V
dBm
C
C
Frequency
Input power
Return loss
50kHz adjacent channel power
100kHz adjacent channel power
-47
-62
8
Tc
Condition
Po
30.5dBm
Z
G
=Z
L
=50
25C
25C
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
2fo
2nd harmonics
3fo
3rd harmonics
Ditto
(CW)
-30
dBc
dBc
I
Dt
ACP50
-30
3
2
1
4
5
6
7
8
3
2
1
4
5
6
7
8
FA01219A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
TYPICAL CHARACTERISTICS 1
Frequency
(MHz)
925.0
941.5
958.0
Pin
Po
Id1
Id2
Idt
Ig1,2
-50k
+50k
-100k
+100k
2SP
3SP
RL
(dBm)
(dBm)
(mA)
(mA)
(mA)
(mA)
(dBc)
(dBc)
(dBc)
(dBc)
(dBc)
(dBc)
(dB)
5.78
6.05
6.52
30.5
30.5
30.5
93
90
91
552
547
543
644
637
634
-1.86
-1.86
-1.86
-49.9
-51.7
-51.6
-49.2
-51.2
-51.6
-62.5
-63.6
-64.4
-62.6
-64.1
-64.6
-37.5
-37.4
-37.2
-49.2
-49.7
-50.2
-10.7
-9.4
-8.5
P
O
,ACP vs Pin CHARACTERISTICS
Pin(dBm)
-5.0
5.0
15
35
10.0
20
25
10
30
0.0
f=925MHz
V
D1
=3.5V
V
D2
=3.5V
V
G
=-2.5V
P
O
,I
D
s vs Pin CHARACTERSTICS
Pin(dBm)
-5
0
5
10
10
-80
-70
-60
-40
-30
-50
15
20
25
30
35
1000
900
800
600
400
200
700
500
300
100
0
P
O
ACP+50k
ACP-50k
ACP+100k
ACP-100k
V
D1
=3.5V,V
D2
=3.5V,V
G
=-2.5V
P
O
I
Dt
I
D2
I
D1
FA01219A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
TYPICAL CHARACTERISTICS 2
ACP vs f CHARACTERISTICS
f(MHz)
908.5
925
941.5
958
974.5
-60
-55
-50
-40
-45
-65
I
D
vs f CHARACTERISTICS
f(MHz)
908.5
941.5
50
800
958
974.5
100
500
0
650
925
1
D2
Pin, R.L vs f CHARACTERISTICS
f(MHz)
908.5
2.0
8.0
941.5
958
5.0
6.0
0.0
974.5
7.0
925
I
D
vs V
D
CHARACTERISTICS
V
D
(V)
3
3.1
3.5
3.8
4
V
D1
=3.5V
V
D2
=3.5V
V
G
=-2.5V
P
O
=30.5dBm SET
-50k
+50k
+100k
-100k
150
200
250
300
350
400
450
550
600
700
750
1
D1
V
D1
=3.5V
V
D2
=3.5V
V
G
=-2.5V
P
O
=30.5dBm SET
4.0
3.0
1.0
-14.0
-2.0
-8.0
-6.0
-18.0
-4.0
-10.0
-12.0
-16.0
V
D1
=3.5V
V
D2
=3.5V
V
G
=-2.5V
P
O
=30.5dBm SET
Pin
R.L.
50
800
100
500
0
650
150
200
250
300
350
400
450
550
600
700
750
3.2 3.3 3.4
3.6 3.7
3.9
f=925MHz
V
G
=-2.5V
P
O
=30.5dBm SET
I
Dt
I
D1
I
Dt
I
D2
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