FA01220A
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. 97
dBc
dBc
DESCRIPTION
FA01220A is RF Hybrid IC designed for 1.5GHz band
small size handheld radio.
FEATURES
Low voltage
3.5V
High gain
20.5B
High efficiency
50%
High power
30.5dBm
APPLICATION
PDC1.5GHz
Unit:mm
2.0
6.0
0.8
10.0
GND
GND
1
2
3
4
8
7
6
5
tolerance:0.2
Typ
Max
Min
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
in
in
ACP100
Total drain current
1453
-6
720
MHz
dBm
mA
1429
P
O
=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50
(
/4DQPSK)
640
(7)
dB
dBc
Symbol
Parameter
Ratings
-30 to +90
V
D
P
in
T
C
(op)
T
stg
Unit
Drain voltage
Input power
Operating case temp
Storage temp
4.5
15
-20 to +85
V
dBm
C
C
Frequency
Input power
Return loss
50kHz adjacent channel power
100kHz adjacent channel power
-47
-62
10
Condition
Tc=25C, Po
30.5dBm
Tc=25C, Z
G
=Z
L
=50
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
2fo
2nd harmonics
3fo
3rd harmonics
Ditto
(CW)
-30
dBc
I
Dt
ACP50
-30
RF INPUT RF OUTPUT
V
D1
GND
GND
GND
V
D2
V
G1,2
3
2
1
4
5
6
7
8
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