Feb.1999
Conditions
Applied for all conduction angles
f = 60Hz, sine wave
= 180
, T
f
=76
C
One half cycle at 60Hz, T
j
=125
C
I
FM
=500A, V
R
2250V, T
j
= 125
C (Fig. 1 and Fig. 2)
(Recommended value 23.5kN)
Typical 530g
785
500
10
4.2
10
5
2000
20 ~ 125
40 ~ 150
22 ~ 28
--
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
FD500JV-90DA
OUTLINE DRAWING
Dimensions in mm
APPLICATION
Clamp diode for GCT Thyristor
High-power inverters
Power supplies as high frequency rectifiers
I
F(AV)
Average forward current ....................... 500A
V
RRM
Repetitive peak reverse voltage ................... 4500V
Q
RR
Reverse recovery charge ................. 1500
C
Press pack type
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Junction temperature
Storage temperature
Mounting force required
Weight
A
A
kA
A
2
s
A/
s
C
C
kN
g
I
F(RMS)
I
F(AV)
I
FSM
I
2
t
d
i
/d
t
T
j
T
stg
--
--
Unit
Symbol
V
RRM
V
RSM
V
R(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Parameter
V
V
V
Symbol
Parameter
Unit
Ratings
MAXIMUM RATINGS
4500
4500
3600
Voltage class
3.5 0.2
2.2 0.2DEPTH
3.5 0.2
2.2 0.2DEPTH
75MAX
47
TYPE NAME
26 0.5
0.4MIN
0.4MIN
Feb.1999
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Forward recovery voltage
Thermal resistance
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
I
RRM
V
FM
Q
RR
Erec
tb/ta
V
FP
R
th(j-f)
mA
V
C
J/P
--
V
C/W
Symbol
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
V
RM
= 4500V, T
j
= 125
C
I
FM
= 1570A, T
j
= 125
C
I
FM
= 500A, d
i
/d
t
= 1000A/
s, V
R
= 2250V, T
j
= 125
C
(Refer to Fig. 1 and Fig. 2)
d
i
/d
t
= 1000A/
s, T
j
= 25
C
Junction to fin
--
--
--
--
--
--
--
--
--
--
4.0
2
100
--
80
3.5
1500
--
--
--
.027
Fig. 1 (Definition of reverse recovery waveform)
Fig. 2 (Reverse recovery test circuit)
Note 1
In case of 2000A/
s, definition of d
i
/d
t
is by VD and inductance value of L (line) as follows.
d
i
/d
t
= VD/L (line) = 2250V/1.125
H = 2000A/
s
0
IFM
d
i
/d
t
(0~50%IFM) (Note 1)
50%IFM
50%IRM
90%IRM
Q
RR
= (trr
IRM)/2
trr
ta
tb
IRM
d
i
/d
t
= VD/L(line) = 2250V/1.125
H = 2000A (Note 1)
L(line)
VD = 2250V
GCT
L(load)
FD500JV
CD
i
Cc : 6
F
Rc = 2
Cc
Rc
Feb.1999
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
PERFORMANCE CURVES
0
1
2
3
4
5
6
7
8
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0
200
400
600
800
1000 1200
6
8
10
2
4
5
7
9
1
3
0
0
2 3
10
3
5 710
2
2 3
10
0
5 7 10
1
2 3 5 710
1
2 3 5 7 10
0
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.005
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
MAXIMUM FORWARD CHARACTERISTICS
FORWARD CURRENT I
F
(A)
Erec VS IF
(TYP.)
THERMAL IMPEDANCE (C/
W)
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
REVERSE RECOVERY LOSS Erec (J/P)
0
200
400
600
800
1000 1200
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0
FORWARD CURRENT I
F
(A)
Q
RR
VS IF
(TYP.)
REVERSE RECOVERY CHARGE Q
RR
(
C)
T
j
= 125C
T
j
= 25C
CONDITION
VR = 2250V, T
j
=125C
d
i
/d
t
= 1000A/
s
CONDITION
VR = 2250V, T
j
=125C
d
i
/d
t
= 1000A/
s
PDF 
ZIP