Feb.1999
FK10UM-12
V
DSS ................................................................................
600V
r
DS (ON) (MAX) ..............................................................
1.18
I
D .........................................................................................
10A
Integrated Fast Recovery Diode (MAX.) ........ 150ns
600
30
10
30
10
30
150
55 ~ +150
55 ~ +150
2.0
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
--
V
V
A
A
A
A
W
C
C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Typical value
MAXIMUM RATINGS
(Tc = 25
C)
OUTLINE DRAWING
Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Parameter
Conditions
Symbol
Ratings
Unit
10.5MAX.
4.5
1.3
3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
4.5MAX.
0.5
2.6
7.0
q w e
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
r
w r
q
e
Feb.1999
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
600
30
--
--
2
--
--
4.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3
0.90
4.50
7.0
1500
170
25
25
35
130
45
1.5
--
--
--
--
10
1
4
1.18
5.90
--
--
--
--
--
--
--
--
2.0
0.83
150
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
I
D
= 1mA, V
GS
= 0V
I
G
=
100
A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, d
is
/d
t
= 100A/
s
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
200
160
120
80
40
0
200
150
100
50
0
5
3
2
10
1
7
5
3
2
10
0
7
5
7
5
3
2
10
1
2 3 5 7 10
1
10
0
2 3 5 7 10
2
2 3 5 7 10
3
T
C
= 25C
Single Pulse
tw=10s
100s
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
10
1
7
5
3
2
10
1
10
1
2 3
5 7 10
0
10
0
7
5
3
2
2 3
5 7 10
1
T
C
= 25C
V
DS
= 10V
Pulse Test
125C
75C
40
32
24
16
8
0
0
4
8
12
16
20
T
C
= 25C
V
DS
=50V
Pulse Test
20
16
12
8
4
0
0
10
20
30
40
50
P
D
=
150W
T
C
= 25C
Pulse Test
4V
5V
V
GS
= 20V
10V
6V
10
8
6
4
2
0
0
4
8
12
16
20
P
D
= 150W
T
C
= 25C
Pulse Test
5V
4V
V
GS
= 20V
10V
6V
40
32
24
16
8
0
0
4
8
12
16
20
I
D
= 20A
T
C
= 25C
Pulse Test
10A
5A
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2.0
1.6
1.2
0.8
0.4
T
C
= 25C
Pulse Test
V
GS
= 10V
20V
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
0
0
20
40
60
80
100
V
DS
= 100V
400V
200V
Tch
= 25C
I
D
= 10A
2 3
5 7 10
0
10
3
7
5
3
2
10
2
7
5
2 3
5 7 10
1
10
1
10
1
3
2
Tch = 25C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
2 3 5 7 10
1
2 3 5 7 10
0
2 3
Ciss
Tch = 25C
f = 1MHz
V
GS
= 0V
Coss
Crss
10
0
7
5
3
2
10
1
0
10
1
7
5
3
2
50
100
150
200
250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
40
32
24
16
8
0
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125C
75C
25C
V
GS
= 0V
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= 100A /
s
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25C
T
ch
= 150C
1.4
1.2
1.0
0.8
0.6
0.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
5
3
2
10
1
2 3
5 7 10
2
10
2
7
5
3
2
2 3
5 7 10
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 10A
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25C
T
ch
= 150C
10
4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
10
2
P
DM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
SOURCE CURRENT d
is
/d
t
(A/
s)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
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