Feb.1999
FK14UM-9
V
DSS ................................................................................
450V
r
DS (ON) (MAX) ..............................................................
0.65
I
D .........................................................................................
14A
Integrated Fast Recovery Diode (MAX.) ........ 150ns
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
--
450
30
14
42
14
42
150
55 ~ +150
55 ~ +150
2.0
V
V
A
A
A
A
W
C
C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Typical value
MAXIMUM RATINGS
(Tc = 25
C)
OUTLINE DRAWING
Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FK14UM-9
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Parameter
Conditions
Symbol
Ratings
Unit
10.5MAX.
4.5
1.3
3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
4.5MAX.
0.5
2.6
7.0
q w e
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
r
w r
q
e
Feb.1999
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
--
--
10
1
4
0.65
4.55
--
--
--
--
--
--
--
--
2.0
0.83
150
--
--
--
--
3
0.50
3.50
7.0
1500
180
30
30
50
130
50
1.5
--
--
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
I
D
= 1mA, V
GS
= 0V
I
G
=
100
A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 7A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 7A, V
GS
= 0V
Channel to case
I
S
= 14A, d
is
/d
t
= 100A/
s
MITSUBISHI Nch POWER MOSFET
FK14UM-9
HIGH-SPEED SWITCHING USE
450
30
--
--
2
--
--
4.5
--
--
--
--
--
--
--
--
--
--
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
2 3 5 7 10
1
10
0
2 3 5 7 10
2
2 3 5 7 10
3
5
3
2
T
C
= 25C
Single Pulse
tw=10s
100s
1ms
10ms
DC
200
160
120
80
40
0
200
150
100
50
0
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14UM-9
HIGH-SPEED SWITCHING USE
50
40
30
20
10
0
0
10
20
30
40
50
P
D
= 150W
T
C
= 25C
Pulse Test
V
GS
= 20V
10V
5V
4V
6V
20
16
12
8
4
0
0
4
8
12
16
20
P
D
= 150W
T
C
= 25C
Pulse Test
V
GS
=20V 10V
5V
6V
4V
40
32
24
16
8
0
0
4
8
12
16
20
I
D
= 20A
T
C
= 25C
Pulse Test
14A
7A
40
32
24
16
8
0
0
4
8
12
16
20
T
C
= 25C
V
DS
= 50V
Pulse Test
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2.0
1.6
1.2
0.8
0.4
T
C
= 25C
Pulse Test
V
GS
= 10V
20V
10
2
7
5
3
2
10
0
10
0
2 3
5 7 10
1
10
1
7
5
3
2
2 3
5 7 10
2
T
C
=25C
V
DS
= 10V
Pulse Test
125C
75C
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14UM-9
HIGH-SPEED SWITCHING USE
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
2 3 5 7 10
1
2 3 5 7 10
0
2 3
Ciss
Tch = 25C
f = 1MHz
V
GS
= 0V
Coss
Crss
2 3
5 7 10
1
10
3
7
5
3
2
10
2
7
5
3
2
2 3
5 7 10
2
10
0
10
1
Tch = 25C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
5.0
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
0
0
20
40
60
80
100
V
DS
= 100V
400V
200V
Tch = 25C
I
D
= 14A
40
32
24
16
8
0
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125C
25C
75C
V
GS
= 0V
Pulse Test
10
0
7
5
3
2
10
1
0
10
1
7
5
3
2
50
100
150
200
250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14UM-9
HIGH-SPEED SWITCHING USE
1.4
1.2
1.0
0.8
0.6
0.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= 100A /
s
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25C
T
ch
= 150C
5
3
2
10
1
2 3
5 7 10
2
10
2
7
5
3
2
2 3
5 7 10
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 14A
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25C
T
ch
= 150C
10
4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
10
2
P
DM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
SOURCE CURRENT d
is
/d
t
(A/
s)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
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