MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
FS10UMA-5A
OUTLINE DRAWING
Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
APPLICATION
C
S
Switch for CRT Display monitor
250
20
10
30
10
65
55 ~ +150
55 ~ +150
2.0
V
GS
= 0V
V
DS
= 0V
L = 200
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
q
10V DRIVE
q
V
DSS ...............................................................................
250V
q
r
DS (ON) (MAX) ..............................................................
0.52
q
I
D .........................................................................................
10A
10.5MAX.
4.5
1.3
3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
4.5MAX.
0.5
2.6
7.0
GATE
DRAIN
SOURCE
DRAIN
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
250
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.0
0.40
2.00
9.0
950
90
25
20
25
150
40
1.5
--
--
0.1
1
4.0
0.52
2.60
--
--
--
--
--
--
--
--
2.0
1.92
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 5A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
0
20
40
60
80
100
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1
7
10
0
5
7
2
3
10
1
5
7
2
3
5
7
2
3
10
1
3
5 7
2
10
2
3
5 7
2
3
5
2
T
C
= 25
C
Single Pulse
100
s
tw =
10
s
1ms
DC
0
4
8
12
16
20
0
4
8
12
16
20
V
GS
= 20V
P
D
= 65W
T
C
= 25
C
Pulse Test
10V
4V
5V
6V
7V
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
= 20V
T
C
= 25
C
Pulse Test
10V
5V
7V
6V
4V
4.5V
P
D
= 65W
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
0
4
8
12
16
20
0
4
8
12
16
20
10A
5A
I
D
= 20A
T
C
= 25
C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
0
0.2
0.4
0.6
0.8
1.0
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
T
C
= 25
C
Pulse Test
V
GS
= 10V
20V
0
4
8
12
16
20
0
4
8
12
16
20
T
C
= 25
C
V
DS
= 10V
Pulse Test
10
0
3
5 7
10
1
3
2
5 7
10
2
3
2
2
2
5 7
10
2
10
1
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
Ciss
Coss
Crss
T
C
h = 25
C
f = 1MH
Z
V
GS
= 0V
10
1
10
0
7
2
3
5
7
2
3
5
7
10
1
5
7
10
2
2
3
5
7
2
3
5
t
d(off)
t
d(on)
t
f
t
r
T
C
h = 25
C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50
10
1
10
0
7
2
3
5
7
2
3
5 7
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
V
DS
= 10V
Pulse Test
T
C
= 25
C
125
C
75
C
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t
C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(
C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25
C)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25
C)
0
4
8
12
16
20
0
20
40
60
80
100
V
DS
= 50V
150V
100V
T
C
h = 25
C
I
D
= 10A
0
8
16
24
32
40
0
0.8
1.6
2.4
3.2
4.0
T
C
= 25
C
75
C
125
C
V
GS
= 0V
Pulse Test
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
D = 1.0
0.5
0.2
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
0.1
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