ChipFind - документация

Электронный компонент: FS18KM-9A

Скачать:  PDF   ZIP
MITSUBISHI Nch POWER MOSFET
FS18KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
2.6
0.2
15
0.3
14
0.5
10
0.3
2.8
0.2
3.2 0.2
1.1
0.2
1.1
0.2
0.75
0.15
2.54
0.25
2.54
0.25
4.5
0.2
0.75
0.15
3
0.3
3.6
0.3
6.5

0.3
GATE
DRAIN
SOURCE
MITSUBISHI Nch POWER MOSFET
FS18KM-9A
HIGH-SPEED SWITCHING USE
450
30
18
54
18
40
55 ~ +150
55 ~ +150
2000
2.0
V
GS
= 0V
V
DS
= 0V
L = 200
H
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
V
A
A
A
W
C
C
V
g
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
V
iso
--
Symbol
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
FS18KM-9A
OUTLINE DRAWING
Dimensions in mm
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
TO-220FN
G 10V DRIVE
G V
DSS ...............................................................................
450V
G r
DS (ON) (MAX) ..............................................................
0.30
G I
D .........................................................................................
18A
MITSUBISHI Nch POWER MOSFET
FS18KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
--
--
--
--
3.0
0.26
2.34
18.0
2350
260
50
35
55
310
70
1.5
--
I
D
= 1mA, V
GS
= 0V
I
GS
=
100A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 9A, V
GS
= 10V
I
D
= 9A, V
GS
= 10V
I
D
= 9A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 9A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 9A, V
GS
= 0V
Channel to case
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
450
30
--
--
2.5
--
--
10.8
--
--
--
--
--
--
--
--
--
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
--
--
10
1
3.5
0.30
2.70
--
--
--
--
--
--
--
--
2.0
3.12
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
10
2
5
7
2
3
10
1
5
7
2
3
10
0
5
7
2
3
10
1
7
10
1
3
5 7
2
10
2
3
5 7
2
10
3
3
5 7
2
T
C
= 25
C
Single Pulse
100
s
tw =
10
s
DC
1ms
10ms
0
10
20
30
40
50
0
10
20
30
40
50
V
GS
= 20V,10V,8V
P
D
= 4 0W
T
C
= 25
C
Pulse Test
5V
6V
0
4
8
12
16
20
0
4
8
12
16
20
P
D
= 40W
T
C
= 25
C
Pulse Test
5V
V
GS
= 20V,10V,8V,6V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
MITSUBISHI Nch POWER MOSFET
FS18KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
8
16
24
32
40
0
4
8
12
16
20
T
C
= 25
C
Pulse Test
I
D
= 35A
25A
18A
9A
0
0.2
0.4
0.6
0.8
1.0
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
T
C
= 25
C
Pulse Test
V
GS
= 10V
20V
0
8
16
24
32
40
0
4
8
12
16
20
T
C
= 25
C
V
DS
= 10V
Pulse Test
10
0
10
2
10
1
2
3
5
7
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
V
DS
= 10V
Pulse Test
T
C
= 25
C
75
C
125
C
10
0
10
2
10
1
2
3
5
7
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
Tch = 25
C
V
GS
= 10V
V
DD
= 200V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
f
t
r
10
0
3 5 7
10
1
3
2
2
5 7
10
2
3
2
3
2
5 7
10
2
3
5
7
10
3
2
2
2
3
5
7
10
4
2
3
5
7
Ciss
Coss
Tch = 25
C
V
GS
= 0V
f = 1MHz
Crss
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE

y
fs

(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
MITSUBISHI Nch POWER MOSFET
FS18KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 9A
Pulse Test
0
4
8
12
16
20
0
40
80
120
160
200
V
DS
= 100V
400V
200V
T
C
h = 25
C
I
D
= 18A
0
8
16
24
32
40
0
0.8
1.6
2.4
3.2
4.0
V
GS
= 0V
Pulse Test
T
C
= 125
C
75
C
25
C
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
P
DM
tw
D
=
T
tw
T
D = 1.0
= 0.5
= 0.2
= 0.1
Single Pulse
= 0.05
= 0.02
= 0.01
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t

C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch
c)
(

C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25

C)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t

C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25

C)
SOURCE CURRENT I
S
(A)