PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
FY7BCH-02A
OUTLINE DRAWING
Dimensions in mm
MITSUBISHI Nch POWER MOSFET
FY7BCH-02A
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
20
10
7
49
7
1.5
6.0
1.6
55 ~ +150
55 ~ +150
0.035
V
GS
= 0V
V
DS
= 0V
L = 10
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
q
2.5V DRIVE
q
V
DSS ..................................................................................
20V
q
r
DS (ON) (MAX) .............................................................
25m
q
I
D ...........................................................................................
7A
TSSOP8
3.0
0.275
0.65
1.1
6.4
4.4
DRAIN
SOURCE
GATE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY7BCH-02A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
V
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
20
--
--
0.4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.9
20
26
0.140
16
1150
380
300
20
80
140
135
0.75
--
50
--
0.1
0.1
1.3
25
37
0.182
--
--
--
--
--
--
--
--
1.1
78.1
--
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 4V
I
D
= 3.5A, V
GS
= 2.5V
I
D
= 7A, V
GS
= 4V
I
D
= 7A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 10V, I
D
= 3.5A, V
GS
= 4V, R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to ambient
I
S
= 1.5A, dis/dt = 50A/
s
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