Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
QM1000HA-24B
I
C
Collector current ...................... 1000A
V
CEX
Collector-emitter voltage ......... 1200V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
145
9
19
28
27
37
28
8
6.5
74
39
73
74
65
65
27
9
163
51
47
25
B
E
BX
C
E
16
3
16 3
34
3
34
3M4
2M8
45
50MAX.
47MAX.
44.5
42
8
B
BX
E
E
C
LABEL
Feb.1999
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Ratings
1200
1200
1200
7
1000
1000
7000
50
10000
40~+150
40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
2100
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V, Emitter open
V
EB
=7V, Collector open
I
C
=1000A, I
B
=1.33A
I
C
=1000A (diode forward voltage)
I
C
=1000A, V
CE
=4.0V
V
CC
=600V, I
C
=1000A, I
B1
=2A, I
B2
=20A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
8.0
8.0
400
4.0
4.2
1.8
--
2.5
20
7.0
0.018
0.07
0.01
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Feb.1999
1000
800
600
400
200
0
0
1
2
3
4
5
T
j
=25C
I
B
=250mA
I
B
=1.33A
I
B
=4A
I
B
=0.5A
2 3 4 5 7
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7
T
j
=25C
T
j
=125C
4
10
3
10
2
10
1
10
2
10
3
10
V
CE
=4.0V
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7
2 3 4 5 7
1
10
V
BE(sat)
V
CE(sat)
1
10
0
10
1
10
2
10
3
10
T
j
=25C
T
j
=125C
I
B
=1.33A
7
5
4
3
2
7
5
4
3
2
2.2
2.6
3.0
3.4
V
CE
=4V
T
j
=25C
3.8
4.2
1
10
0
10
1
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
T
j
=25C
T
j
=125C
0
10
1
10
1
10
I
C
=1000A
I
C
=800A
I
C
=600A
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
3 4 5 7
2 3 4 5 7
3
10
2
t
on
V
CC
=600V
I
B2
=20A
I
B1
=2A
2 3
t
f
T
j
=25C
T
j
=125C
t
s
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
7
5
4
3
2
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25C
T
j
=125C
1
10
2
10
3
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
3
2
7
5
3
2
7
5
3
2
0.020
0.016
0.012
0.008
0.004
0
2 3 5 7
0
10
1
10
2
10
3
10
0
10
2400
400
0
0
400
800
1200
200
600
1000
1200
1600
800
2000
T
j
=125C
I
B2
=20A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25C
2
10
3
10
1
10
0
10
4
10
3
10
2
10
1
10
1ms
DC
100s
50s
200s
7
5
3
2
2 3
5 7
7
5
3
2
2 3
2 3
5 7
2
10
1
10
0
10
0
10
1
10
t
s
t
f
V
CC
=600V
I
C
=1000A
I
B1
=2A
T
j
=25C
T
j
=125C
4
4
4
4
4
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Z
th (jc)
(
C/ W)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
7
5
3
2
7
5
3
2
7
5
3
2
0.10
0.08
0.06
0.04
0.02
0
7
5
3
2
1
10
0
10
0
10
3
10
2
10
1
10
7
5
4
3
2
7
5
4
3
2
0
2000
4000
6000
8000
10000
0
10
1
10
2
10
7
5
4
3
2
7
5
4
3
2
5 7
2 3 4 5 7
T
j
=25C
T
j
=125C
t
rr
I
rr
Q
rr
2
10
3
10
1
10
V
CC
=600V
I
B1
=2A
I
B2
=20A
2 3 4 5
7
5
4
3
2
7
5
4
3
2
0
10
1
10
1
10
2
10
3
10
Z
th (jc)
(
C/ W)
t
rr
(
s)
I
rr
(A), Q
rr
(
c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
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