Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM15HA-H
I
C
Collector current .......................... 15A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
4.2
C
E
B
0.8
0.8
0.5
6.35
4.75
4.2
0.4
24.0
7.0
3.7
16.6
19.5
30.2
39.0
A
B
7.0
7.0
1.7
2.4
1.7
1.3
2.0
24.0
3.2
6.35
4.75
B
C
E
LABEL
Fig. A
Fig. B
2.4
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M4
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
600
600
600
7
15
15
100
0.9
150
40~+150
40~+125
2500
0.98~1.47
10~15
25
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
50/100
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=15A, I
B
=0.3A
I
C
=15A (diode forward voltage)
I
C
=15A, V
CE
=2V/5V
V
CC
=300V, I
C
=15A, I
B1
=I
B2
=0.3A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
80
2.0
2.5
1.5
--
1.5
8.0
2.0
1.2
2.5
0.4
Feb.1999
25
20
15
10
5
0
0
1
2
3
4
5
T
j
=25C
I
B
=0.4A
I
B
=0.2A
I
B
=0.1A
I
B
=0.06A
I
B
=0.02A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
V
CE
=5.0V
T
j
=25C
T
j
=125C
1
10
0
10
7
5
4
3
2
1
10
7
5
4
3
2
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
=2.0V
T
j
=25C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
I
B
=0.3A
V
BE(sat)
V
CE(sat)
1
10
7
5
4
3
2
2
10
7
5
4
3
2
0
1
2
3
4
5
7
T
j
=25C
T
j
=125C
I
C
=15A
I
C
=10A
I
C
=5A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
T
j
=25C
T
j
=125C
I
B1
=I
B2
=0.3A
V
CC
=300V
t
s
t
f
t
on
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
2
10
3
10
1
10
0
10
3
10
2
10
1
10
0
10
0
10
1
10
1
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5 7
1
10
2 3 4 5 7
0
10
3
2
2 3
t
s
t
f
T
j
=25C
T
j
=125C
I
C
=15A
I
B1
=0.3A
V
CC
=300V
40
0
0
200
400
600
800
30
20
10
T
j
=125C
I
B2
=0.5A
1A
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25C
100s
500s
1ms
t
w
=10ms
DC
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4
0.8
1.2
1.6
2.0
2.4
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
1.0
0
5
3
2
7
5
3
2
0.2
0.4
0.6
1.2
1.4
1.6
4
4
4
4
4
0.8
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
0
10
1
10
2
10
3
10
1
10
0
10
2
10
1
10
0
10
1
10
2
10
1
10
0
10
1
10
1
10
0
10
1
10
2
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
40
80
120
160
200
20
60
100
140
180
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25C
T
j
=125C
V
CC
=300V
I
B1
=I
B2
=0.3A
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
0
3
2
7
5
3
2
0.4
0.8
1.2
1.6
2.4
2.8
3.2
4
4
4
4
4
5
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
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