Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM200DY-2HB
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
112
26
17
93
0.25
25
25
21.5
C1
E2
C2E1
14
17
8
17
8
17
8
5
6
61
5
6
6
70
0.25
89
5
MAX
1
2.8
(7)
21
8.5Min.
B2
E2
B1
E1
B1X
B2X
B1X
B2X
B2
E2
B1
E1
C2E1
E2
C1
1
4
6.5
3 M6
LABEL
Tab#110, t=0.5
15
I
C
Collector current ........................ 200A
V
CEX
Collector-emitter voltage ......... 1000V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
200
200
1560
10
2000
40~+150
40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V, Collector open
I
C
=200A, I
B
=270mA
I
C
=200A (diode forward voltage)
I
C
=200A, V
CE
=4.0V
V
CC
=600V, I
C
=200A I
B1
=0.4A, I
B2
=4.0A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
4.0
4.0
200
4.0
4.0
1.8
--
2.5
15
3.0
0.08
0.35
0.04
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
2
10
1
10
0
10
1
10
2
10
1
10
0
10
1
10
1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
3.0
5.0
4.6
4.2
3.8
3.4
T
j
=25C
V
CE
=4.0V
500
400
300
200
100
0
0
1
2
3
4
5
T
j
=25C
I
B
=0.4A
I
B
=8.0A
I
B
=1.0A
I
B
=2.0A
I
B
=4.0A
7
5
3
2
7
5
3
2
5
4
3
2
1
0
3
2
I
C
=100A
7
5
T
j
=25C
T
j
=125C
I
C
=200A
I
C
=300A
7
5
3
2
7
5
3
2
7
5
3
2
1
10
2 3 4 5 7
2 3 4 5 7
3
10
t
s
t
on
t
f
I
B1
=0.4A
V
CC
=600V
I
B2
=4.0A
2
10
T
j
=25C
T
j
=125C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25C
T
j
=125C
I
B
=270mA
1
10
V
BE(sat)
V
BE(sat)
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
T
j
=25C
T
j
=125C
V
CE
=4V
V
CE
=10V
1
10
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
3
10
2
10
1
10
0
10
1
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
2 3 4 5 7
2 3 4 5 7
1
10
t
s
t
f
0
10
T
j
=25C
T
j
=125C
V
CC
=600V
I
B1
=0.4A
I
C
=200A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25C
2
10
3
10
1
10
0
10
3
10
2
10
1
10
0
10
1ms
100s
50s
200s
DC
7
5
3
2
7
5
3
2
7
5
3
2
0.10
0.08
0.06
0.04
0.02
0
7
5
3
2
1
10
0
10
0
10
3
10
2
10
1
10
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.4
2.4
2.0
1.6
1.2
0.8
T
j
=25C
T
j
=125C
1
10
400
0
0
400
800
1200
1600
300
200
100
I
B2
=4A
T
j
=125C
I
B2
=8A
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
NONREPETITIVE
Feb.1999
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
t
rr
(
s)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS (DIODE PART)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
Z
th (jc)
(
C/ W)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
0
10
3
10
2
10
1
10
1
10
2
10
1
10
0
10
1
10
2
10
3
10
7
5
4
3
2
7
5
4
3
2
0
400
800
1200
1600
2000
0
10
1
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0.32
0.24
0.16
0.08
0
7
5
3
2
1
10
0
10
0
10
2
7
5
3 4
1
10
7
5
3
2
7
5
3
2
7
5
3
2
2 3 4 5 7
2 3 4 5 7
3
10
2
10
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
V
CC
=600V
I
B1
=0.4A
I
B2
=4A
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